SavantIC Semiconductor Product Specification BUW49 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package. ·High current capability. ·Fast switching speed. ·Low collector saturation voltage APPLICATIONS ·Switching regulators. ·Motor control. ·High frequency and efficency converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 30 A ICM Collector current (Pulse) 40 A IB Base current 6 A IBM Base current (peak) 10 A PC Collector power dissipation 150 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 SavantIC Semiconductor Product Specification BUW49 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 80 V VCEsat-1 Collector-emitter saturation voltage IC=40A; IB=4A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=30A; IB=3A 1.2 V Base-emitter saturation voltage IC=30A; IB=3A 2.0 V ICEX Collector cut-off current VCE=rated ;VBE=-1.5V TC=125 1 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA fT Transition frequency VCE=15V,f=15MHz;IC=1A 0.8 1.2 µs 0.6 1.1 µs 0.15 0.25 µs VBEsat 8 Switching times : ton Turn-on time ts Storage time tf Fall time IC=30A; IB1=- IB2=4A VCC=80V THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BUW49