SAVANTIC BUV28

SavantIC Semiconductor
Product Specification
BUV28
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·High frequency and efficiency converters
·Switching regulators
·Motor control
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
IB
Base current
2
A
70
W
Ptot
Tj
Tstg
Total power dissipation
TC=25
Max.operating junction temperature
Storage temperature
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
MAX
UNIT
1.785
/W
SavantIC Semiconductor
Product Specification
BUV28
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30m A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=3A ;IB=0.3 A
0.7
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.6A
1.5
V
Base-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
ICBO
Collector cut-off current
VCB =300V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
1.0
ms
1.5
µs
0.3
µs
VBEsat
CONDITIONS
MIN
TYP.
MAX
200
UNIT
V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;VCC=150V
IB1=-IB1=0.5A;
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
BUV28