ISC BUF405A

Inchange Semiconductor
Product Specification
BUF405A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage,high speed
APPLICATIONS
・Switch mode power supplies
・Motor drivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
7.5
A
ICM
Collector current-Peak
15
A
IB
Base current (DC)
3
A
IBM
Base current-Peak
tp<5ms
4.5
A
Ptot
Total power dissipation
TC=25℃
80
W
150
℃
-65~150
℃
VALUE
UNIT
1.56
℃/W
Tj
Tstg
tp<5ms
Maximum operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BUF405A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
VCEO(SUS)
Collector-emitter sustaining voltage
IC=200mA ; IB=0; L=25mH
V(BR)EBO
Emitter-base breakdwon voltage
IE=50mA ;IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=2.5A; IB=0.25A
TC=100℃
0.8
VCEsat-2
Collector-emitter saturation voltage
IC=5A ;IB=1A
TC=100℃
0.5
VBEsat-1
Base-emitter saturation voltage
IC=2.5A; IB=0.25A
TC=100℃
0.9
VBEsat-2
Base-emitter saturation voltage
IC=5A ;IB=1A
TC=100℃
1.1
ICEV
Collector cut-off current
VCE=1000V; VBE=-1.5V
TC=100℃
IEBO
Emitter cut-off current
VEB=5V; IC=0
MAX
UNIT
450
V
7
V
2.8
2.0
1.5
1.5
V
V
V
V
100
500
μA
1
mA
Switching times inductive load
ts
Storage time
tf
Fall time
IC=2.5A ;VCC=50V
IB1 =0.25A;VBB=-5V ;L=1mH
RBB=2.4Ω;Vclamp=400V
2
0.8
μs
0.05
μs
Inchange Semiconductor
Product Specification
BUF405A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3