BCX69 TRANSISTOR (PNP) SOT-89 FEATURES For general AF applications z z High collector current z High current gain Low collector-emitter saturation voltage z z Complementary type: BCX68 (NPN) 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Dissipation 0.8 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA , IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA DC current gain BCX69 BCX69-10 BCX69-16 BCX69-25 VCE=-1V, IC=-500mA 85 85 100 160 VCE=-10V, IC=-5mA 50 hFE(3) 1) VCE=-1V, IC=-1A 60 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-100mA Base-emitter 1) hFE (1) hFE(2) 1) VBE(ON) voltage fT Transition frequency 1) Test 1) IC=-5mA, VCE=-10V 375 160 250 375 -0.5 -0.6 -1 IC=-1A, VCE=-1V VCE=-5V, IC=-100mA f=20MHz 100 V V MHz Pulse test: t ≤=300µs, D = 2% MARKING: BCX69=CE1 BCX69-10=CF1 BCX69-16=CG1 BCX69-25=CH1 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BCX69 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５