HTSEMI KTC4378

KTC4378
TRANSISTOR (NPN)
SOT-89
1. BASE
FEATURES
High voltage
2. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
1
2
3. EMITTER
Value
Units
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Dissipation
0.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=1mA,IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
μA
hFE(1)
VCE=2V,IC=0.05A
100
hFE(2)
VCE=2V,IC=1A
30
320
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
1.2
V
fT
Transition frequency
Collector output capacitance
CLASSIFICATION OF
Rank
Range
Marking
Cob
VCE=10V,IC=50mA
150
MHz
VCB=10V,IE=0,f=1MHz
12
pF
hFE(1)
Y
GR
100-200
160-320
TY
TGR
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
KTC4378
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05
KTC4378
3 JinYu
semiconductor
www.htsemi.com
Date:2011/05