KTC4378 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES High voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1 2 3. EMITTER Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA hFE(1) VCE=2V,IC=0.05A 100 hFE(2) VCE=2V,IC=1A 30 320 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking Cob VCE=10V,IC=50mA 150 MHz VCB=10V,IE=0,f=1MHz 12 pF hFE(1) Y GR 100-200 160-320 TY TGR １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4378 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4378 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５