BC868 TRANSISTOR (NPN) SOT-89 FEATURES High current z Low voltage z 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 32 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=25V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=1V,IC=500mA 85 hFE(2) VCE=1V,IC=1A 60 hFE(3) VCE=10V,IC=5mA 50 VCE(sat) IC=1A,IB=100mA VBE1 VCE=10V,IC=5mA VBE2 VCE=1V,IC=1A DC current gain Collector-emitter saturation voltage 375 0.5 0.62 V V Base-emitter voltage fT Transition frequency CLASSIFICATION OF Rank Range Marking 1 VCE=5V,IC=10mA,f=100MHz 40 MHz hFE(1) BC868-10 BC868-16 BC868-25 85-160 100-250 160-375 CBC CCC CDC １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ BC868 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５