STT2622
520mA, 50V,RDS(ON) 1.8Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Description
The STT2622 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The SOT-26 is universally used for all commercial-industrial applications.
Features
* RoHS Compliant
* Low Gate Charge
* Surface Mount Package
D1
D2
D1
S1
D2
6
5
4
REF.
A
A1
A2
c
D
E
E1
2622
Date Code
G2
G1
S2
S1
1
2
3
G1
S2
G2
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Symbol
V
±20
V
520
mA
ID@TA=70 C
410
mA
IDM
1.5
A
0.8
W
0.006
W/ C
VGS
Gate-Source Voltage
3
Continuous Drain Current,VGS@10V
3
Continuous Drain Current,VGS@10V
Pulsed Drain Current 1
Total Power Dissipation
o
ID@TA=25 C
o
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Unit
50
VDS
Drain-Source Voltage
Ratings
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
150
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
STT2622
520mA, 50V,RDS(ON) 1.8 Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
Test Condition
BVDSS
50
_
_
V
VGS=0V, ID= 250uA
BVDS/ Tj
_
0.06
_
V/ oC
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
± 30
uA
VGS=± 20V
_
_
10
uA
VDS=50V,VGS=0
_
_
100
uA
VDS= 40V,VGS=0
_
_
1.8
IDSS
RDS(ON)
_
1
1.6
0.5
_
0.5
_
12
_
10
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Tr
_
Td(Off)
_
Tf
_
29
_
_
32
50
8
_
6
_
Coss
Reverse Transfer Capacitance
Forward Transconductance
3.2
Td(ON)
Ciss
Output Capacitance
_
_
56
VGS=10V, ID=500mA
Ω
_
_
Reference to 25oC ,ID= 1mA
nC
VGS=4.5V, ID=200mA
ID=500mA
VDS=40V
VGS=4.5V
VDD= 25V
ID= 500mA
nS
VGS=10V
RG=3.3Ω
RD=50 Ω
pF
VGS=0V
VDS=25V
f=1.0MHz
Crss
_
Gfs
_
600
_
mS
VDS=10V, ID=500mA
Symbol
Min.
Typ.
Max.
Unit
Test Condition
_
_
1.3
V
IS=600mA , VGS=0V.
Source-Drain Diode
Parameter
Forward On Voltage 2
VS D
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
3.Surface mounted on 1 in copper pad of FR4 board; 250 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
STT2622
Elektronische Bauelemente
520mA, 50V,RDS(ON) 1.8Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
STT2622
Elektronische Bauelemente
520mA, 50V,RDS(ON) 1.8Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4