SMG2302 3.2A, 20V,RDS(ON) 85mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Description L The SMG2302 provide the designer with the best S 2 3 Top View B 1 Combination of fast switching, low on-resistance and cost-effectiveness. D G J C Features K H Drain * Capable of 2.5V gate drive Gate Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm D Source * Small package outline Dim G Marking : 2302 S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage 3 Continuous Drain Current, [email protected] Pulsed Drain Current 1,2 Total Power Dissipation 20 V ±12 V 3.2 A o ID@TA=70 C 2.6 A IDM 10 A 1.38 W 0.01 W/ C ID@TA=25 C o PD@TA=25 C Linear Derating Factor Operating Junction and Storage Temperature Range Unit o VGS 3 Continuous Drain Current, [email protected] Ratings Tj, Tstg o o -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SMG2302 3.2A, 20V,RDS(ON) 85mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.1 _ V/ C VGS(th) 0.5 _ 1.2 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=± 12V _ _ 1 uA VDS=20V,VGS=0 _ _ 10 uA VDS=20V,VGS=0 _ _ 85 o Drain-Source Leakage Current (Tj=25 C) o Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 IDSS RDS(ON) _ _ _ 4.4 Gate-Source Charge Qgs _ 0.6 _ Gate-Drain ("Miller") Charge Qgd 1.9 _ 5.2 _ Rise Time Turn-off Delay Time Fall Time Input Capacitance Td(ON) _ Tr _ 37 _ Td(Off) _ 15 _ Tf _ 5.7 _ _ 145 Ciss nS _ S Min. Typ. Max. Unit _ _ 1.2 V _ _ 1 A 10 A Symbol RG=6Ω _ 6 Gfs VGS=5V RD=2.8Ω _ _ ID=3.6A VDS=10V VGS=4.5V ID=3.6A 50 Reverse Transfer Capacitance Crss VGS=4.5V, ID=3.6A VDD=10V _ Coss Forward Transconductance nC 100 Output Capacitance o Reference to 25 C ,ID=1mA VGS=2.5V, ID=3.1A _ _ VGS=0V, ID=250uA _ Qg Turn-on Delay Time 2 mΩ 115 Total Gate Charge 2 _ o Test Condition pF VGS=0V VDS=10V f=1.0MHz VDS=5V, ID=3.6A Source-Drain Diode Parameter Forward On Voltage 2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Is ISM _ _ Test Condition IS=1.6A, VGS=0V. VD=VG=0V, VS=1.2V G Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG2302 Elektronische Bauelemente 3.2A, 20V,RDS(ON) 85mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG2302 Elektronische Bauelemente 3.2A, 20V,RDS(ON) 85mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4