Si4894DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.5 0.018 @ VGS = 4.5 V 10.2 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4894DY-T1 Si4894DY-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 12.5 8.5 10 6.8 A 2.7 1.3 A 3.0 1.4 1.9 0.9 IDM Continuous Source Current (Diode Conduction)a Unit 20 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 35 42 73 90 16 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71162 S-50692—Rev. E, 11-Apr-05 www.vishay.com 1 Si4894DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V 1.8 V VDS = 30 V, VGS = 0 V "100 1 nA VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 12.5 A 0.010 0.012 VGS = 4.5 V, ID = 10.2 A 0.015 0.018 gfs VDS = 15 V, ID = 12.5 A 30 VSD IS = 2.7 A, VGS = 0 V 0.7 1.1 VDS = 15 V, VGS = 5 V, ID = 12.5 A 11.5 17 20 30 VDS = 15 V, VGS = 10 V, ID = 12.5 A 3.0 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 4.5 0.5 2.4 td(on) Rise Time tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 2.7 A, di/dt = 100 A/ms 10 20 5 10 30 60 10 20 30 60 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 4 V 25 I D − Drain Current (A) I D − Drain Current (A) 25 20 3V 15 10 5 20 15 10 TC = 125_C 5 25_C −55_C 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) Document Number: 71162 S-50692—Rev. E, 11-Apr-05 Si4894DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1400 1200 0.020 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.025 VGS = 4.5 V 0.015 VGS = 10 V 0.010 Ciss 1000 800 600 Coss 400 Crss 0.005 200 0.000 0 0 5 10 15 20 25 30 0 5 10 ID − Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 12.5 A VGS = 10 V ID = 12.5 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 20 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 4 8 12 16 20 0.6 −50 24 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 30 I S − Source Current (A) 15 ID = 12.5 A 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71162 S-50692—Rev. E, 11-Apr-05 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4894DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 30 24 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 18 12 −0.4 6 −0.6 −0.8 −50 0 −25 0 25 50 75 100 125 10−2 150 10−1 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Time (sec) TJ − Temperature (_C) 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 10−1 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71162. www.vishay.com 4 Document Number: 71162 S-50692—Rev. E, 11-Apr-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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