ROHM RBQ20NS65A

Data Sheet
Schottky Barrier Diode
RBQ20NS65A
lApplications
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
BQ20NS
65A
①
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low IR.
lConstruction
Silicon epitaxial planer
lStructure
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
① ②
③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
Reverse voltage (DC)
VR
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
Tj
Storage temperature
Limits
65
65
20
100
150
Unit
V
V
A
A
°C
°C
-40 to +150
Tstg
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Symbol
VF
Min.
Typ.
Max.
Forward voltage
-
-
0.69
V
Reverse current
IR
-
-
0.3
mA
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1/4
Conditions
Unit
IF=10A
VR=65V
2011.11 - Rev.A
Data Sheet
RBQ20NS65A
100
100000
Ta=150°C
10
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
10000
Ta=125°C
Ta=150°C
1
Ta=75°C
Ta=25°C
0.1
1000
Ta=125°C
100
Ta=75°C
10
1
Ta=25°C
0.1
Ta=-25°C
Ta=-25°C
0.01
0.01
0
100
200
300
400
500
600
700
800
0
650
640
f=1MHz
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(nF)
10000
1000
100
10
Ta=25°C
IF=10A
n=30pcs
630
620
AVE:610.4mV
610
600
590
580
570
560
1
550
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
950
Ta=25°C
VR=65V
n=30pcs
40
AVE:25.41mA
30
20
10
CAPACITANCE BETWEEN TERMINALS:Ct(nF)
50
REVERSE CURRENT:IR(mA)
5 10 15 20 25 30 35 40 45 50 55 60 65 70
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=25°C
f=1MHz
VR=0V
n=10pcs
940
930
920
AVE:902pF
910
900
890
880
870
860
850
0
IR DISPERSION MAP
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Ct DISPERSION MAP
2/4
2011.11 - Rev.A
Data Sheet
RBQ20NS65A
500
30
450
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
400
8.3ms
350
300
AVE:233A
250
200
150
100
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:13.3ns
5
50
0
0
trr DISPERSION MAP
IFSM DISRESION MAP
500
500
450
IFSM
400
8.3ms
350
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
450
8.3ms
1cyc
300
250
200
150
IFSM
400
t
350
300
250
200
150
100
100
50
50
0
0
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
25
100
20
Rth(j-a)
10
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
Rth(j-c)
D=1/2
15
Sin(q＝180)
10
0.1
DC
5
0.01
0.001
0
0.01
0.1
1
10
100
1000
0
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© 2011 ROHM Co., Ltd. All rights reserved.
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.11 - Rev.A
Data Sheet
RBQ20NS65A
50
10
0A
45
Io
0V
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
8
DC
6
D=1/2
4
Sin(q＝180)
DC
35
T
D=1/2
D=t/T
VR=30V
Tj=150°C
30
25
20
15
10
2
VR
t
Sin(q＝180)
5
0
0
0
10
20
30
40
50
60
0
70
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
50
30
Io
40
DC
35
T
25
VR
D=t/T
VR=30V
Tj=150°C
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0A
0V
45
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
25
30
D=1/2
25
20
15
Sin(q=180)
10
AVE:18.6kV
20
15
10
AVE:5.8kV
5
5
0
0
0
25
50
75
100
125
150
C=200pF
R=0W
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
C=100pF
R=1.5kW
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
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R1120A