Data Sheet 1.2V Drive Nch MOSFET RU1C002UN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) UMT3F 2.0 0.9 0.53 (1) 0.53 0.425 2.1 Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (3) 1.25 0.425 0.32 (2) 0.65 0.65 1.3 0.13 Abbreviated symbol : QR Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RU1C002UN Inner circuit Taping TCL 3000 (3) ∗1 ∗2 (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS ID Continuous Drain current Pulsed Power dissipation Channel temperature Range of storage temperature IDP *1 PD *2 Limits Unit 20 8 200 V V mA 400 mA 150 mW Tch Tstg 150 55 to 150 C C Symbol Limits Unit 833 C / W (1) (2) 1 BODY DIODE 2 ESD PROTECTION DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* * Each terminal mounted on a reference land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A Data Sheet RU1C002UN Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions Typ. Max. Unit - - 10 A VGS=8V, VDS=0V 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 0.8 1.2 - 1.0 1.4 - 1.2 2.4 * ID=200mA, VGS=2.5V ID=200mA, VGS=1.8V Static drain-source on-state resistance RDS (on) - 1.6 4.8 Forward transfer admittance l Yfs l * 400 - - mS VDS=10V, ID=200mA Input capacitance Ciss - 25 - pF VDS=10V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V Output capacitance Coss - 10 - pF VGS=0V Reverse transfer capacitance Crss - 10 - pF f=1MHz Turn-on delay time td(on) * - 5 - ns VDD 10V, ID=150mA Rise time tr * td(off) * - 10 - ns VGS=4.0V - 15 10 - ns ns RL=68 RG=10 Min. Typ. Max. - - 1.2 Turn-off delay time Fall time tf * *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions Is=100mA, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A Data Sheet RU1C002UN Electrical characteristics DRAIN CURRENT : ID[A] 0.4 VGS= 1.5V 0.3 VGS= 1.3V 0.2 VGS= 1.2V VGS= 4.5V VGS= 2.5V VGS= 1.8V 0.1 0 0.4 VGS= 1.3V 0.3 VGS= 1.2V 0.2 VGS= 1.5V 0.1 Ta=25°C Pulsed 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) 6 8 1000 100 0.001 0.01 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1.0 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical transfer characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 1.5 VGS= 2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10000 VGS= 1.8V Pulsed 0.0001 10000 DRAIN-CURRENT : ID[A] 10000 Ta=125°C 75°C 25°C −25°C 0.001 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 4.0V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 0.01 0.00001 0.0 10 10000 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 4 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 VDS=10V Pulsed VGS= 2.5V VGS= 1.8V 10000 VGS= 1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] 0.5 Ta=25°C Pulsed DRAIN CURRENT : ID (A) 0.5 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 3/5 VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 2011.09 - Rev.A Data Sheet RU1C002UN 1 SOURCE CURRENT : IS (A) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= 10V Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 1 2.5 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 1 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-CURRENT : ID[A] 100 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed CAPACITANCE : C (pF) SWITHING TIME : t (ns) 1000 100 td(off) tf td(on) 10 ID= 0.02A 1.5 1 0.5 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Source current vs. source-drain voltage Fig.10 Forward Transfer Admittance vs. Drain Current Ta=25°C Pulsed ID= 0.2A 2 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C f=1MHZ VGS=0V Ciss Coss 10 Crss tr 1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.13 Switching characteristics www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.14 Typical capacitance vs. drain-source voltage 4/5 2011.09 - Rev.A Data Sheet RU1C002UN Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A