Data Sheet 1.2V Drive Nch MOSFET RUB002N02 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37 0.17 0.35 0.6 Abbreviated symbol : QR Application Switching Packaging specifications Inner circuit Package Code Basic ordering unit (pieces) RUB002N02 Taping T2CL 8000 Type (3) ∗2 ∗1 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 8 V Drain current Source current (Body Diode) Continuous ID 200 mA Pulsed Continuous IDP IS *1 800 125 mA mA Pulsed ISP *1 800 mA PD *2 150 mW Tch Tstg 150 55 to 150 C C Symbol Limits Unit 833 C / W Power dissipation Channel temperature Range of storage temperature (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* * Each terminal mounted on a recommended land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet RUB002N02 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V (BR)DSS Min. Typ. Max. Unit Conditions - - 10 A VGS=8V, VDS=0V 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 0.7 1.0 - 0.8 1.2 - 1.0 1.4 - 1.2 2.4 ID=40mA, VGS=1.5V - 1.6 4.8 ID=20mA, VGS=1.2V l Yfs l * 0.2 - - S ID=200mA, VDS=10V Input capacitance Ciss - 25 - pF VDS=10V Output capacitance Coss - 10 - pF VGS=0V Reverse transfer capacitance Crss - 10 - pF f=1MHz Turn-on delay time td(on) * - 5 - ns ID=150mA, VDD 10V tr * - 10 - ns VGS=4V td(off) * tf * - 15 10 - ns ns RL=67 RG=10 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time RDS (on)* ID=200mA, VGS=4V ID=200mA, VGS=2.5V ID=200mA, VGS=1.8V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=200mA, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet RUB002N02 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) 0.5 0.5 Ta=25°C Pulsed VGS= 1.5V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 2.5V VGS= 1.8V 0.4 0.4 0.3 VGS= 1.3V 0.2 VGS= 1.2V VGS= 4.0V VGS= 2.5V VGS= 1.8V 0.1 VGS= 1.5V VGS= 1.3V 0.3 VGS= 1.2V 0.2 0.1 Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V 1000 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10000 10000 VGS= 4.0V Pulsed VGS= 2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.001 0.01 0.1 1000 100 0.001 1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 3/6 0.01 0.1 DRAIN-CURRENT : ID[A] 1 2011.04 - Rev.A Data Sheet RUB002N02 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10000 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.8V Pulsed 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 1 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10000 1 VGS= 1.2V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 1 0.1 DRAIN-CURRENT : ID[A] 1 DRAIN-CURRENT : ID[A] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 2.5 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] ID= 0.2A 2 ID= 0.02A 1.5 1 0.5 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RUB002N02 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 Data Sheet 2011.04 - Rev.A Data Sheet RUB002N02 Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A