ROHM RYU002N05

Data Sheet
0.9V Drive Nch MOSFET
RYU002N05
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
Features
1) High speed switing.
2) Small package(UMT3).
3)Ultra low voltage drive(0.9V drive).
(2)
(1)
Abbreviated symbol : QJ
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Type
Code
Basic ordering unit (pieces)
RYU002N05
Taping
T306
3000

(3)
 Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Source current
(Body Diode)
Limits
Unit
VDSS
50
V
VGSS
8
V
Continuous
ID
200
mA
Pulsed
Continuous
IDP
IS
*1
800
150
mA
mA
Pulsed
ISP
*1
800
mA
PD
*2
200
mW
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
Rth (ch-a)*
625
C / W
Gate-source voltage
Drain current
(2)
Symbol
Power dissipation
Channel temperature
Range of storage temperature
(1)
(1) SOURCE
(2) GATE
(3) DRAIN
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.04 - Rev.A
Data Sheet
RYU002N05
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V (BR)DSS
Min.
Typ.
Max.
Unit
-
-
10
A
VGS=8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
Conditions
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250
RG=10
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Turn-off delay time
Fall time
RDS (on)*
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V

S
ID=200mA, VGS=1.5V
ID=200mA, VDS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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2/5
2011.04 - Rev.A
Data Sheet
RYU002N05
 Electrical characteristics curves
0.1
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
Ta=25C
Pulsed
VGS= 0.8V
0.05
0.2
0.4
0.6
VGS= 0.9V
0.1
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.1
0.01
0.001
0
0.8
1
0
2
4
6
8
0
10
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25C
Pulsed
1000
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
100
0.01
0.1
1
10000
VGS= 4.5V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
DRAIN-CURRENT : ID[A]
VGS= 1.5V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.01
0.1
0.1
VGS= 2.5V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
1
0.001
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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© 2011 ROHM Co., Ltd. All rights reserved.
10000
VGS= 1.2V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
10000
0.001
0.01
10000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
10000
0.001
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Ta=25C
Pulsed
VGS= 0.8V
0.05
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
0
0.15
VDS= 10V
Pulsed
VGS= 0.7V
VGS= 0.7V
0
1
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
DRAIN CURRENT : ID[A]
0.15
DRAIN CURRENT : ID[A]
0.2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
DRAIN CURRENT : ID[A]
0.2
10000
VGS= 0.9V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
1000
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)
2011.04 - Rev.A
Ta=25C
Ta=25C
Ta=75C
Ta=125C
0.1
0.01
0.1
0.1
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.01
1
0
0.5
1
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
10
td(on)
tr
1
0.1
1
Ta=25C
Pulsed
4000
ID= 0.01A
3000
ID= 0.20A
2000
1000
0
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25C
f=1MHz
VGS=0V
4
CAPACITANCE : C [pF]
tf
100
Ta=25C
VDD=25V
VGS=4.5V
RG=10
5000
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
td(off)
0.01
VGS=0V
Pulsed
DRAIN-CURRENT : ID[A]
1000
SWITCHING TIME : t [ns]
SOURCE CURRENT : Is [A]
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
1
VDS= 10V
Pulsed
GATE-SOURCE VOLTAGE : VGS [V]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
10
Data Sheet
RYU002N05
3
2
Ta=25C
VDD=25V
ID= 0.2A
RG=10
Pulsed
1
0
0
0.5
1
100
Ciss
10
Crss
Coss
1
1.5
0.01
0.1
1
10
100
DRAIN-CURRENT : ID[A]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Switching Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
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© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.04 - Rev.A
Data Sheet
RYU002N05
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
10%
90%
td(off)
tf
toff
Fig.1-2　Switching Waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.04 - Rev.A
Notice
Notes
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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R1120A