Data Sheet 0.9V Drive Nch + Nch MOSFET UM6K34N Dimensions (Unit : mm) Structure Silicon N-channel MOSFET UMT6 (SC-88) <SOT-363> Features 1) Mounting cost and area can be cut in half. 2) Low On-resistance. 3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment. (6) (1) (5) (2) (4) (3) Abbreviated symbol : K34 Application Interfacing, Switching Inner circuit (6) (5) Packaging specifications Type ∗1 Package Code Basic ordering unit (pieces) Taping TCN 3000 ○ UM6K34N (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 50 V Gate-source voltage VGSS 8 V Drain current Source current (Body Diode) Continuous ID 200 mA Pulsed Continuous IDP Is *1 800 125 mA mA Pulsed Isp *1 800 mA 150 120 150 55 to 150 mW / TOTAL mW / ELEMENT C C Power dissipation Channel temperature Range of storage temperature (4) PD *2 Tch Tstg ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Channel to Ambient Symbol * Rth (ch-a) Limits Unit 833 1042 ˚C / W /TOTAL ˚C / W /ELEMENT * Each terminal mounted on a recommended land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet UM6K34N Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=8V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Conditions 50 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=50V, VGS=0V VGS (th) 0.3 - 0.8 V VDS=10V, ID=1mA - 1.6 2.2 ID=200mA, VGS=4.5V - 1.7 2.4 ID=200mA, VGS=2.5V - 2.0 2.8 - 2.2 3.3 ID=100mA, VGS=1.2V - 3.0 9.0 ID=10mA, VGS=0.9V * RDS (on) ID=200mA, VGS=1.5V l Yfs l* 0.2 - - S ID=200mA, VDS=10V Input capacitance Ciss - 26 - pF VDS=10V Output capacitance Coss - 6 - pF VGS=0V Reverse transfer capacitance Crss - 3 - pF f=1MHz Turn-on delay time td(on) * - 5 - ns ID=100mA, VDD 25V Rise time tr * td(off) * tf * - 8 - ns VGS=4.5V - 17 43 - ns ns RL=250 RG=10 Forward transfer admittance Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=200mA, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet UM6K34N Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) 0.2 0.2 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V 0.1 VGS= 0.8V 0.05 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V 0.15 VGS= 0.9V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.15 Ta=25°C pulsed VGS= 0.9V 0.1 VGS= 0.8V Ta=25°C pulsed 0.05 VGS= 0.7V VGS= 0.7V 0 0 0 0.2 0.4 0.6 0.8 1 0 6 8 Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 10000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 Ta=25°C pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed DRAIN CURRENT : ID[A] 4 DRAIN-SOURCE VOLTAGE : VDS[V] 1 0.01 1000 . 100 0.001 0.001 0 0.2 0.4 0.6 0.8 1 0.01 VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 0.1 1 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10000 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 2 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VGS= 2.5V Pulsed 0.01 0.1 1 DRAIN-CURRENT : ID[A] 3/6 2011.04 - Rev.A Data Sheet UM6K34N Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10000 10000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 1 0.01 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 Fig.10 Forward Transfer Admittance vs. Drain Current Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) VGS= 0.9V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.001 0.01 0.1 VDS= 10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.01 1 0.1 DRAIN-CURRENT : ID[A] 1 DRAIN-CURRENT : ID[A] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 5000 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 0.1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 Ta=25°C pulsed 4000 ID= 0.01A 3000 ID= 0.20A 2000 1000 0 0 0.5 1 1.5 0 SOURCE-DRAIN VOLTAGE : VSD [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 6 7 8 GATE-SOURCE VOLTAGE : VGS[V] 4/6 2011.04 - Rev.A Data Sheet UM6K34N Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Switching Characteristics 1000 Ta=25°C VDD=25V VGS=4.5V RG=10Ω Pulsed tf 4 GATE-SOURCE VOLTAGE : VGS [V] SWITCHING TIME : t [ns] td(off) 100 10 td(on) 1 0.01 3 2 Ta=25°C VDD=25V ID= 0.2A RG=10Ω Pulsed 1 tr 0 0.1 1 0 DRAIN-CURRENT : ID[A] 0.5 1 1.5 TOTAL GATE CHARGE : Qg [nC] Fig.15 Typical Capacitance vs. Drain-Source Voltage 1000 CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V Ciss 100 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A Data Sheet UM6K34N Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A