ROHM RAL045P01

Data Sheet
1.5V Drive Pch MOSFET
RAL045P01
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
0.2Max.
TUMT6
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(1.5V)
Abbreviated symbol : SC
 Application
Switching
 Packaging specifications
Type
 Inner circuit
Package
Code
Taping
TCR
Basic ordering unit (pieces)
RAL045P01
(6)
3000

Parameter
Drain current
Source current
(Body Diode)
Symbol
Limits
Unit
VDSS
12
V
V
VGSS
0 to 8
Continuous
ID
4.5
A
Pulsed
Continuous
IDP
IS
*1
18
0.8
A
A
Pulsed
ISP
*1
18
A
PD
*2
1
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
Rth (ch-a)*
125
C / W
Gate-source voltage
Power dissipation
Channel temperature
Range of storage temperature
(4)
∗2
 Absolute maximum ratings (Ta = 25C)
Drain-source voltage
(5)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.03 - Rev.A
Data Sheet
RAL045P01
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Zero gate voltage drain current
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=8V, VDS=0V
12
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
10
A
VDS=12V, VGS=0V
VGS (th)
0.3
-
1.0
V
VDS=6V, ID=1mA
-
22
30
IGSS
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
Min.
ID=4.5A, VGS=4.5V
Static drain-source on-state
resistance
*
RDS (on)
-
28
39
-
38
57
-
50
100
Forward transfer admittance
l Yfs l*
5.5
-
-
S
ID=4.5A, VDS=6V
Input capacitance
Ciss
-
4200
-
pF
VDS=6V
m
ID=2.2A, VGS=2.5V
ID=2.2A, VGS=1.8V
ID=0.9A, VGS=1.5V
Output capacitance
Coss
-
350
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
330
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
16
-
ns
ID=2.2A, VDD 6V
tr *
-
60
-
ns
VGS=4.5V
td(off) *
-
400
-
ns
RL=2.7
Rise time
Turn-off delay time
Fall time
tf *
-
150
-
ns
RG=10
Total gate charge
Qg *
-
40
-
nC
ID=4.5A
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
6.5
6.0
-
nC
nC
VDD 6V
VGS=4.5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=4.5A, VGS=0V
*Pulsed
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2/6
2011.03 - Rev.A
Data Sheet
RAL045P01
Electrical characteristic curves (Ta=25C)
Fig.1 Typical output characteristics(Ⅰ)
Fig.2 Typical output characteristics(Ⅱ)
4.5
4.5
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -2.0V
3.5
DRAIN CURRENT : -ID[A]
Ta=25°C
Pulsed
3
VGS= -1.8V
2.5
3.5
VGS= -1.2V
VGS= -1.5V
2
1.5
3
VGS= -1.2V
2.5
VGS= -2.0V
VGS= -1.8V
VGS= -1.5V
2
1.5
1
1
VGS= -1.0V
VGS= -1.0V
0.5
0.5
0
0
0
0.2
0.4
0.6
0.8
0
1
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
10
100
VDS= -6V
Pulsed
Ta=25°C
Pulsed
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
DRAIN CURRENT : -ID[A]
Ta=25°C
Pulsed
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
4
DRAIN CURRENT : -ID[A]
4
0.1
0.01
0.001
10
0
0.5
1
1.5
2
0.1
1
GATE-SOURCE VOLTAGE : -VGS[V]
10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
100
VGS= -4.5V
Pulsed
VGS= -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
10
0.1
1
10
0.1
DRAIN-CURRENT : -ID[A]
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1
10
DRAIN-CURRENT : -ID[A]
3/6
2011.03 - Rev.A
Data Sheet
RAL045P01
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
100
100
VGS= -1.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VGS= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
0.1
1
10
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.9 Forward Transfer Admittance vs. Drain Current
10
VDS= -6V
Pulsed
VGS=0V
Pulsed
REVERSE DRAIN CURRENT : -Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs|
[S]
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.1
0.1
1
0
10
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN-CURRENT : -ID[A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Switching Characteristics
1000
100
Ta=25°C
VDD= -6V
VGS=-4.5V
RG=10W
Pulsed
Ta=25°C
Pulsed
80
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
10
DRAIN-CURRENT : -ID[A]
ID= -4.5A
60
ID= -0.9A
40
td(off)
100
tf
tr
td(on)
20
10
0
0
2
4
6
0.01
8
1
10
100
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.1
4/6
2011.03 - Rev.A
Data Sheet
RAL045P01
Fig.13 Dynamic Input Characteristics
Fig.14 Typical Capacitance vs. Drain-Source Voltage
5
10000
4
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : -VGS [V]
Ciss
3
2
Ta=25°C
VDD= -6V
ID= -4.5A
RG=10W
Pulsed
1
1000
Coss
Ta=25°C
f=1MHz
VGS=0V
Crss
100
0
0
5
10
15
20
25
30
35
40
45
0.01
50
TOTAL GATE CHARGE : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
5/6
2011.03 - Rev.A
Data Sheet
RAL045P01
 Measurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
RL
50%
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2　Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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6/6
2011.03 - Rev.A
Notice
Notes
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R1120A