Data Sheet 4V Drive Pch MOSFET RW1E025RP Structure Silicon P-channel MOSFET Dimensions (Unit : mm) WEMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : UT Application Switching Packaging specifications Type Inner circuit Package Code Taping T2CR Basic ordering unit (pieces) RW1E025RP (6) 8000 (5) (4) ∗2 ∗1 Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Source current (Body Diode) Limits Unit VDSS 30 V V VGSS 20 Continuous ID 2.5 A Pulsed Continuous IDP IS *1 10 0.5 A A Pulsed ISP *1 10 A PD *2 0.7 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit Rth (ch-a)* 179 C / W Gate-source voltage Drain current Symbol Power dissipation Channel temperature Range of storage temperature (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A Data Sheet RW1E025RP Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit Conditions - - 10 A VGS=20V, VDS=0V 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 55 75 * RDS (on) ID=2.5A, VGS=10V - 85 115 m ID=1.2A, VGS=4.5V - 95 125 Forward transfer admittance Zero gate voltage drain current ID=1.2A, VGS=4V l Yfs l * 1.5 - - S ID=2.5A, VDS=10V Input capacitance Ciss - 480 - pF VDS=10V Output capacitance Coss - 70 - pF VGS=0V Reverse transfer capacitance Crss - 70 - pF f=1MHz Turn-on delay time td(on) * - 7 - ns ID=1.2A, VDD 15V Rise time tr * td(off) * - 12 - ns VGS=10V - 50 - ns RL=12.5 tf * - 22 - ns RG=10 Total gate charge Qg * - 5.2 - nC ID=2.5A Gate-source charge Gate-drain charge Qgs * Qgd * - 1.6 1.6 - nC nC VDD 15V VGS=5V Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=2.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A Data Sheet RW1E025RP Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 5 5 Ta=25°C pulsed VGS=-10.0V VGS=-4.0V VGS=-4.5V VGS=-4.5V 4 VGS=-4.0V Drain Current : -ID [A] Drain Current : -ID [A] 4 Ta=25°C pulsed VGS=-10.0V 3 VGS=-3.0V 2 VGS=-3.0V 3 VGS=-2.8V 2 VGS=-2.8V 1 1 VGS=-2.5V VGS=-2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : -VDS [V] 1000 8 10 1000 VGS=-10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=-4.0V VGS=-4.5V VGS=-10V 100 10 0.01 0.1 1 10 0.01 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=-4.5V pulsed VGS=-4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mW] Static Drain-Source On-State Resistance RDS(on) [mW] 4 Drain-Source Voltage : -VDS [V] 100 10 0.01 0.1 1 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 10 0.01 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 3/6 2011.03 - Rev.A Data Sheet RW1E025RP Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 10 10 VDS=-10V pulsed 1 Drain Currnt : -ID [A] Forward Transfer Admittance Yfs [S] VDS=-10V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 0.0 0.5 1.0 Drain Current : -ID [A] 2.5 3.0 3.5 4.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 10 VGS=0V pulsed Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Source Current : -Is [A] 2.0 Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 ID=-1.2A ID=-2.5A 150 100 50 0 0.01 0.0 0.5 1.0 0 1.5 2 4 6 8 10 Gate-Source Voltage : -VGS [V] Source-Drain Voltage : -VSD [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10 1000 VDD≒-15V VGS=-10V RG=10W Ta=25°C Pulsed 100 Ta=25°C VDD=-15V ID=-2.5A Pulsed 8 Gate-Source Voltage : -VGS [V] tf Switching Time : t [ns] 1.5 td(off) tr 10 6 4 2 td(on) 1 0 0.01 0.1 1 10 0 4 6 8 10 12 Total Gate Charge : Qg [nC] Drain Current :- ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4/6 2011.03 - Rev.A RW1E025RP Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Capacitance : C [pF] Ta=25°C f=1MHz VGS=0V 1000 Ciss 100 Crss Coss 10 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A Data Sheet RW1E025RP Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% RL D.U.T. 50% 10% 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A