Data Sheet Schottky Barrier Diode RBQ10NS65A lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm) BQ10NS 65A ① lGeneral rectification 1)Cathode Common Dual type.（LPDS） 2)Low IR. lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① ② ③ lTaping dimensions（Unit : mm） ●Absolute maximum ratings(Tc=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 65 VR Reverse voltage (DC) 65 Average rectified forward current (*1) 10 Io IFSM Forward current surge peak (60Hz・1cyc)(*2) 50 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C. lElectrical characteristics(Tj=25°C) Parameter Unit V V A A °C °C Symbol VF Min. Typ. Max. Unit Forward voltage - - 0.69 V Reverse current IR - - 0.15 mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 Conditions IF=5A VR=65V 2011.11 - Rev.A Data Sheet RBQ10NS65A 10 100000 Ta=150°C Ta=125°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 10000 1 Ta=150°C Ta=75°C Ta=25°C 0.1 1000 Ta=125°C 100 Ta=75°C 10 1 Ta=25°C 0.1 Ta=-25°C Ta=-25°C 0.01 0.01 0 100 200 300 400 500 600 700 800 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 700 f=1MHz 690 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 Ta=25°C IF=5A n=30pcs 680 670 660 650 AVE:629.2mV 640 630 620 610 600 1 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 450 Ta=25°C VR=65V n=30pcs 40 30 20 AVE:12.36mA 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 50 REVERSE CURRENT:IR(mA) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 440 Ta=25°C f=1MHz VR=0V n=10pcs 430 420 410 AVE:396pF 400 390 380 370 360 350 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A Data Sheet RBQ10NS65A 300 30 8.3ms 200 AVE:129.0A 150 100 50 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc IFSM 250 20 15 AVE:7.5ns 10 5 0 0 trr DISPERSION MAP IFSM DISRESION MAP 300 300 IFSM 250 8.3ms 200 8.3ms 1cyc 150 100 IFSM t PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 50 0 0 1 10 1 100 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 15 100 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 10 1 Rth(j-c) 0.1 10 D=1/2 Sin(q＝180) 5 DC 0.01 0.001 0.001 0 0.01 0.1 1 10 100 0 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3/4 2011.11 - Rev.A Data Sheet RBQ10NS65A 2 30 0A 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 DC 1 D=1/2 Sin(q＝180) 0.5 Io 0V VR D=t/T VR=30V Tj=150°C DC t 20 T D=1/2 15 10 Sin(q＝180) 5 0 0 0 10 20 30 40 50 60 0 70 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 30 30 Io 0A 0V 25 VR t 20 T DC ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 D=t/T VR=30V Tj=150°C 15 D=1/2 10 5 20 10 5 Sin(q＝180) AVE:12.6kV 15 AVE:2.9kV 0 0 0 25 50 75 100 125 150 C=200pF R=0W CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) C=100pF R=1.5kW ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A