This product complies with the RoHS Directive (EU 2002/95/EC). DMA206E1 Silicon PNP epitaxial planar type For high-frequency amplification Features Package High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Dual DSA2G01 (Individual) Code Mini6-G4-B Pin Name 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) Packaging Marking Symbol: C9 Basic Part Number Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Internal Connection Absolute Maximum Ratings Ta = 25°C Parameter 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –30 V Collector-emitter voltage (Base open) VCEO –20 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –30 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C (C1) 6 (B1) 5 (C2) 4 Tr2 Tr1 1 (E1) 2 (E2) 3 (B2) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Base-emitter voltage VBE VCE = –10 V, IC = –1 mA Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –20 V, IB = 0 –100 µA Emitter-base cutoff current (Collector open) IEBO VEB = –5 V, IC = 0 –10 µA Forward current transfer ratio hFE VCE = –10 V, IC = –1 mA 70 220 hFE (Small/Large) VCE = –10 V, IC = –1 mA 0.50 VCE(sat) IC = –10 mA, IB = –1 mA Transition frequency fT VCE = –10 V, IC = –1 mA Reverse transfer capacitance (Common emitter) Cre Noise figure Reverse transfer impedance hFE ratio * Collector-emitter saturation voltage – 0.7 Unit V 0.99 – 0.1 V 300 MHz VCE = –10 V, IC = –1 mA, f = 10.7 MHz 1.0 pF NF VCE = –10 V, IC = –1 mA, f = 5 MHz 2.8 dB Zrb VCE = –10 V, IC = –1 mA, f = 2 MHz 22 W 150 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Publication date: September 2010 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DMA206E1 DMA206E1_PT-Ta DMA206E1_IC-VCE PT Ta IC VCE 400 DMA206E1_hFE-IC hFE IC −50 250 300 200 100 0 40 80 120 160 −20 −150 µA −100 µA −10 0 200 IB = −500 µA −450 µA −400 µA −350 µA −300 µA −250 µA −200 µA −30 Ambient temperature Ta (°C) −50 µA 0 −2 −4 −30°C −10 −102 Collector current IC (mA) 25°C −30 Ta = 85°C −10 0 0 − 0.4 VCE = −10 V Ta = 25°C 250 200 150 100 50 −1 −10 − 0.8 Base-emitter voltage VBE (V) fT IC Transition frequency fT (MHz) −30°C −20 DMA206E1_fT-IC 0 −10−1 50 0 −1 −102 Collector current IC (mA) Ver. AED −10 −102 Collector current IC (mA) Cob VCB 25°C 300 −30°C DMA206E1_Cob-VCB VCE = 10 V Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) Ta = 85°C 350 25°C 100 −12 −40 IC / IB = 10 −1 150 IC VBE −1 −10−2 −10−1 2 −10 200 DMA206E1_IC-VBE VCE(sat) IC −10−1 −8 Ta = 85°C Collector-emitter voltage VCE (V) DMA206E1_VCEsat-IC −10 −6 VCE = −10 V −1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 −40 Forward current transfer ratio hFE Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C IE = 0 f =1 MHz Ta = 25°C 4.0 3.0 2.0 1.0 0 −1 −10 −102 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). DMA206E1 Mini6-G4-B Unit: mm +0.20 2.90 −0.05 +0.10 0.50 −0.05 +0.05 0.13 −0.02 +0.10 0.30 −0.05 1 2 3 (0.95) (0.95) 1.9 ±0.1 0.4 ±0.2 (0.65) 6° 1.50 −0.05 +0.2 4 2.8 −0.3 5 +0.25 6 +0.3 1.1 −0.1 0 to 0.1 1.1 −0.1 +0.2 8° Ver. AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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