This product complies with the RoHS Directive (EU 2002/95/EC). DSA5002 Silicon PNP epitaxial planar type For general amplification Complementary to DSC5002 DSA2002 in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SMini3-F2-B Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Pin Name 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C Marking Symbol: A2 Packaging Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –60 V Collector-emitter voltage (Base open) VCEO –50 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –500 mA Peak collector current ICP –1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –5 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 hFE1 *2 – 0.1 VCE = –10 V, IC = –150 mA 120 hFE2 VCE = –10 V, IC = –500 mA 40 Collector-emitter saturation voltage *1 VCE(sat) IC = –300 mA, IB = –30 mA – 0.2 – 0.6 V Base-emitter saturation voltage *1 VBE(sat) IC = –300 mA, IB = –30 mA – 0.9 –1.5 V fT VCE = –10 V, IC = –50 mA 130 VCB = –10 V, IE = 0, f = 1 MHz 7.3 Forward current transfer ratio *1 Transition frequency Collector output capacitance (Common base, input open circuited) Cob 340 mA MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Code R S 0 Rank R S No-rank hFE1 120 to 240 170 to 340 120 to 340 Marking Symbol A2R A2S A2 Product of no-rank is not classified and have no marking symbol for rank. Publication date: January 2011 Ver. CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSA5002 DSA5002_IC-VCE DSA5002_PC-Ta PC Ta 200 150 100 50 −80 IB = −500 µA −400 µA −60 −300 µA −40 −200 µA −100 µA −20 40 80 120 160 0 200 Ambient temperature Ta (°C) 0 −4 VCE = −10 V 25°C Ta = 85°C −30°C −200 Ta = 85°C −30°C −100 25°C −1 000 0 0 − 0.4 DSA5002_fT-IC fT IC 250 VCE = −10 V Ta = 25°C 200 150 100 50 −10 − 0.8 −1.2 Base-emitter voltage VBE (V) Collector current IC (mA) −1 0 −1 −100 Collector current IC (mA) Ver. CED −10 −100 −1 000 Collector current IC (mA) Cob VCB −300 0 − 0.1 50 DSA5002_Cob-VCB −400 −1 −100 −30°C 100 −12 −600 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) IC / IB = 10 −10 25°C 150 IC VBE −500 − 0.01 −1 200 DSA5002_IC-VBE VCE(sat) IC − 0.1 Ta = 85°C Collector-emitter voltage VCE (V) DSA5002_VCEsat-IC −10 −8 250 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 Forward current transfer ratio hFE VCE = −10 V −100 Collector current IC (mA) Collector power dissipation PC (mW) 300 Ta = 25°C 0 Transition frequency fT (MHz) hFE IC −120 250 2 DSA5002_hFE-IC IC VCE 25 IE = 0 f = 1 MHz Ta = 25°C 20 15 10 5 0 0 −10 −20 −30 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). DSA5002 SMini3-F2-B Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 1 0.425 ±0.05 (5°) 2.10 ±0.10 1.25 ±0.10 3 2 (0.65) (0.65) +0.05 0.13 −0.02 (0.49) 1.30 ±0.10 0 to 0.10 0.90 ±0.10 (5°) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202