DRC5114E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5114E DRC2114E in SMini3 type package Unit: mm Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: NB Packaging DRC5114E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 1: Base 2: Emitter 3: Collector Panasonic JEITA Code B SMini3-F2-B SC-85 C R1 R2 E Resistance value R1 10 kΩ R2 10 kΩ Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA 35 0.25 2.1 V V 0.8 V Input resistance R1 –30% 10 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2012 Ver. DED 1 DRC5114E DRC5114E_hFE-IC DRC5114E_IC-VCE DRC5114E_PT-Ta PT Ta IC VCE 200 hFE IC 500 120 150 100 50 0 0 40 80 120 160 IB = 350 µA 300 µA 80 250 µA 60 200 µA 40 150 µA 20 100 µA 0 200 Ambient temperature Ta (°C) 50 µA 0 2 4 8 10 400 Ta = 85°C 300 25°C 200 −30°C 100 0 0.1 12 1 IC / IB = 20 100 DRC5114E_VIN-IO IO VIN 10 10 Collector current IC (mA) DRC5114E_IO-VIN VCE(sat) IC VIN IO 100 VO = 5 V VO = 0.2 V Ta = 85°C 1 Ta = 85°C 0.1 −30°C 1 Input voltage VIN (V) Output current IO (mA) Collector-emitter saturation voltage VCE(sat) (V) 6 VCE = 10 V Collector-emitter voltage VCE (V) DRC5114E_VCEsat-IC 10 Forward current transfer ratio hFE 100 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C 25°C 10−1 −30°C 10−2 10 25°C −30°C 1 Ta = 85°C 25°C 0.01 0.1 1 10 Collector current IC (mA) 100 10−3 0 0.5 1.0 1.5 Input voltage VIN (V) Ver. DED 2.0 0.1 0.1 1 10 100 Output current IO (mA) 2 DRC5114E SMini3-F2-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. DED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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