This product complies with the RoHS Directive (EU 2002/95/EC). DMA50101 Silicon PNP epitaxial planar type For general amplification DMA20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SMini5-F3-B Pin Name 1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2) Basic Part Number Dual DSA2001 (Common emitter) Marking Symbol: A0 Packaging Internal Connection Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) (C1) 5 Absolute Maximum Ratings Ta = 25°C Parameter 4: Collector (Tr2) 5: Collector (Tr1) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –60 V Collector-emitter voltage (Base open) VCEO –50 V Emitter-base voltage (Collector open) VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C (C2) 4 Tr2 Tr1 1 (B1) 2 (E) 3 (B2) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –60 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0 –7 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10 V, IC = –2 mA 210 460 hFE (Small/Large) VCE = –10 V, IC = –2 mA 0.50 hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob 0.99 IC = –100 mA, IB = –10 mA – 0.2 VCE = –10 V, IC = –2 mA 150 MHz 2 pF VCB = –10 V, IE = 0, f = 1 MHz – 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Publication date: November 2010 Ver. BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DMA50101 DMA50101_PT-Ta DMA50101_IC-VCE PT Ta 200 Collector current IC (mA) 150 100 50 −500 µA −80 −400 µA −300 µA −60 −200 µA −40 −100 µA −20 0 40 80 120 160 0 200 Ambient temperature Ta (°C) 0 −2 −4 −1 Ta = 85°C 25°C −100 VCE = −10 V Ta = 85°C −30°C −60 −40 0 0 − 0.4 fT IC 250 VCE = −10 V Ta = 25°C 150 100 50 −1 −10 25°C −80 DMA50101_fT-IC 0 − 0.1 100 0 − 0.1 −100 Collector current IC (mA) Ver. BED −1 −10 −100 Collector current IC (mA) Cob VCB − 0.8 Base-emitter voltage VBE (V) Collector current IC (mA) 200 −30°C DMA50101_Cob-VCB −20 −30°C −10 25°C 200 −12 −120 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) IC / IB = 10 −1 300 IC VBE −100 − 0.01 − 0.1 −10 Ta = 85°C DMA50101_IC-VBE VCE(sat) IC − 0.1 −8 400 Collector-emitter voltage VCE (V) DMA50101_VCEsat-IC −10 −6 VCE = −10 V 500 −1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) Total power dissipation PT (mW) IB = −600 µA Forward current transfer ratio hFE 600 −100 0 Transition frequency fT (MHz) hFE IC −120 Ta = 25°C 2 DMA50101_hFE-IC IC VCE IE = 0 f = 1 MHz Ta = 25°C 4.0 3.0 2.0 1.0 0 −1 −10 −100 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). DMA50101 SMini5-F3-B Unit: mm 2.0 ±0.1 1.3 ±0.1 (0.65) 4 2.1 ±0.1 1.25 ±0.10 5 7° (0.425) (0.65) 1 2 3 +0.05 0.20 ±0.05 0.13 −0.02 0 to 0.10 0.7 ±0.1 (0.15) 7° Ver. 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