PANASONICBATTERY DRA5114E0L

DRA5114E
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5114E
DRA2114E in SMini3 type package
Unit: mm
 Features
 Low collector-emitter saturation voltage VCE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Marking Symbol: LB
 Packaging
DRA5114E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–50
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
B
SMini3-F2-B
SC-85

C
R1
R2
E
Resistance value
R1
10
kΩ
R2
10
kΩ

Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
– 0.5
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
Collector-emitter saturation voltage
VCE(sat)
IC = –10 mA, IB = – 0.5 mA
Input voltage (ON)
VI(on)
VCE = – 0.2 V, IC = –5 mA
Input voltage (OFF)
VI(off)
VCE = –5 V, IC = –100 µA
35

– 0.25
–2.1
V
V
– 0.8
V
Input resistance
R1
–30%
10
+30%
kΩ
Resistance ratio
R1 / R2
0.8
1.0
1.2

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2012
Ver. DED
1
DRA5114E
DRA5114E_IC-VCE
DRA5114E_PT-Ta
PT  Ta
−100
200
Collector current IC (mA)
150
100
50
−700 µA
−600 µA
−80
−500 µA
−60
−400 µA
−300 µA
−40
−200 µA
−20
0
40
80
120
160
0
200
−100 µA
0
−2
−4
−6
−8
−10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
DRA5114E_VCEsat-IC
DRA5114E_IO-VIN
VCE(sat)  IC
−10
Output current IO (mA)
−1
25°C
150
100
Ta = 85°C
−30°C
−30°C
50
−1
−10
−100
Collector current IC (mA)
DRA5114E_VIN-IO
VIN  IO
−100
VO = −5 V
VO = − 0.2 V
Ta = 85°C
−1
25°C
−10−1
− 0.1
− 0.01
− 0.1
−10
Ta = 85°C
200
IO  VIN
IC / IB = 20
VCE = −10 V
250
0
− 0.1
−12
Input voltage VIN (V)
Total power dissipation PT (mW)
IB = −800 µA
Forward current transfer ratio hFE
300
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
hFE  IC
−120
250
0
DRA5114E_hFE-IC
IC  VCE
−30°C
−10−2
−10
25°C
−30°C
Ta = 85°C
−1
25°C
−1
−10
Collector current IC (mA)
−100
−10−3
0
− 0.5
−1.0
−1.5
Input voltage VIN (V)
Ver. DED
−2.0
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
2
DRA5114E
SMini3-F2-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. DED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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your using the products described in this book for any special application, unless our company agrees to your using the products in
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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