PANASONIC DMA90401

DMA90401
Silicon PNP epitaxial planar type
Unit: mm
For general amplification
DMA50401 in SSMini6 type package
 Features
 High forward current transfer ratio hFE with excellent linearity
 Low collector-emitter saturation voltage VCE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Marking Symbol: A7

Basic Part Number
Double DSA2001 (Individual)
 Packaging
DMA904010R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)

Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Tr2
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–60
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Emitter-base voltage (Collector open)
VEBO
–7
V
Collector current
IC
–100
mA
Peak collector current
ICP
–200
mA
Total power dissipation
PT
125
mW
Tj
150
°C
Tstg
–55 to +150
°C
Overall Junction temperature
Storage temperature
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
(C1)
6
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F3-B
SC-107C
SOT-666
(B2)
5
Tr1
1
(E1)
(E2)
4
Tr2
2
(B1)
3
(C2)

Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–60
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 µA, IC = 0
–7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –10 V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –2 mA
460

– 0.5
V
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
210
IC = –100 mA, IB = –10 mA
– 0.2
VCB = –10 V, IC = –2 mA
150
MHz
2
pF
VCB = –10 V, IE = 0, f = 1 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2013
Ver. EED
1
DMA90401
DMA90401_IC-VCE
DMA90401_PT-Ta
PT  Ta
150
600
100
75
50
−500 µA
−80
−400 µA
−60
−300 µA
−40
−200 µA
−20
25
40
80
120
160
0
200
0
−2
−4
−10
IC / IB = 10
−120
Collector current IC (mA)
−1
Ta = 85°C
−30°C
−10
25°C
200
−30°C
100
0
− 0.1
−12
Ta = 85°C
3.0
−30°C
−60
2.0
−40
1.0
0
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0
Base-emitter voltage VBE (V)
Collector current IC (mA)
−100
IE = 0
f =1 MHz
Ta = 25°C
4.0
25°C
−20
−100
−10
Cob  VCB
VCE = −10 V
−80
−1
Collector current IC (mA)
DMA90401_Cob-VCB
25°C
−1
300
IC  VBE
100
− 0.01
− 0.1
Ta = 85°C
DMA90401_IC-VBE
VCE(sat)  IC
− 0.1
−8
400
Collector-emitter voltage VCE (V)
DMA90401_VCEsat-IC
−10
−6
500
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
−100 µA
VCE = −10 V
Forward current transfer ratio hFE
IB = −600 µA
−100
Collector current IC (mA)
Total power dissipation PT (mW)
125
Ambient temperature Ta (°C)
Collector-emitter saturation voltage VCE(sat) (V)
hFE  IC
−120
Ta = 25°C
0
DMA90401_hFE-IC
IC  VCE
−1.2
0
−1
−10
−100
Collector-base voltage VCB (V)
DMA90401_fT-IC
fT  IC
Transition frequency fT (MHz)
250
VCE = −10 V
Ta = 25°C
200
150
100
50
0
− 0.1
−1
−10
−100
Collector current IC (mA)
Ver. EED
2
DMA90401
SSMini6-F3-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. EED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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