TSM4835 30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Ordering Information Part No. TSM4835CS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 25 V ID - 9.5 A IDM - 50 A PD 2.5 W Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation o Ta = 25 C Ta > 25 oC Operating Junction Temperature Operating Junction and Storage Temperature Range 1.6 W TJ +150 o TJ, TSTG - 55 to +150 o Symbol Limit C C Thermal Performance Parameter Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM4835 1-5 Rθja 50 2003/12 rev. A Unit o C/W Electrical Characteristics o Ta = 25 C, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS - 30 -- -- V Drain-Source On-State Resistance VGS = - 10V, ID = -9.5A RDS(ON) -- 13 18 mΩ Drain-Source On-State Resistance VGS = - 4.5V, ID = -7.5A RDS(ON) -- 22 30 Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) -1 -- -3 V Zero Gate Voltage Drain Current VDS = - 30V, VGS = 0V IDSS -- -- - 1.0 uA Gate Body Leakage VGS = ± 25V, VDS = 0V IGSS -- -- ± 100 nA Forward Transconductance VDS = - 15V, ID = - 8A gfs -- 22 -- S -- 23 34 Dynamic VDS = - 15V, ID = - 4.6A, Total Gate Charge VGS = - 5V Qg -- VDS = - 15V, ID = - 4.6A, Gate-Source Charge VGS = - 10V Gate-Drain Charge Turn-On Delay Time VDD = - 15V, RL = 15Ω, Turn-On Rise Time ID = - 1A, VGEN = - 10V, Turn-Off Delay Time RG = 6Ω Turn-Off Fall Time nC 54 60 Qgs -- 8.5 -- Qgd -- 10.3 -- td(on) -- 24 30 tr -- 12 30 td(off) -- 78 120 tf -- 37 80 nS Input Capacitance VDS = - 15V, VGS = 0V, Ciss -- 2520 -- Output Capacitance f = 1.0MHz Coss -- 490 -- Crss -- 330 -- IS -- -- - 2.1 A VSD -- - 0.77 - 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 2.1A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM4835 2-5 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM4835 3-5 2003/12 rev. A Electrical Characteristics Curve (continued) TSM4835 4-5 2003/12 rev. A SOP-8 Mechanical Drawing A SOP-8 DIMENSION DIM 9 16 B 1 P 8 G R C D TSM4835 M F K 5-5 MILLIMETERS INCHES A MIN 4.80 MAX 5.00 MIN 0.189 MAX 0.196 B 3.80 4.00 0.150 0.157 C D 1.35 0.35 1.75 0.49 0.054 0.014 0.068 0.019 F 0.40 1.25 0.016 0.049 G K 1.27 (typ) 0.10 0.25 0.05 (typ) 0.004 0.009 M 0o 7o 0o 7o P R 5.80 0.25 6.20 0.50 0.229 0.010 0.244 0.019 2003/12 rev. A