Si5402BDC New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability and Date Code Part # Code Bottom View S N-Channel MOSFET Ordering Information: Si5402BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 6.7 4.9 4.8 3.5 IDM 20 2.1 1.1 2.5 1.3 1.3 0.7 TJ, Tstg −55 to 150 Soldering Recommendations (Peak Temperature)b, c Unit A W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 45 50 80 95 18 22 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73051 S-41495—Rev. A, 09-Jun-04 www.vishay.com 1 Si5402BDC New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 20 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 4.9 A 0.029 0.035 VGS = 4.5 V, ID = 4.4 A 0.035 0.042 gfs VDS = 10 V, ID = 4.9 A 19 VSD IS = 1.1 A, VGS = 0 V 0.8 1.2 10 20 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 1.9 nC 1.6 f = 1 MHz 14 W td(on) 10 15 tr 10 15 27 40 10 15 20 60 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 4.9 A VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.1 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 4 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 8 4 12 8 TC = 125_C 4 3V 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 73051 S-41495—Rev. A, 09-Jun-04 Si5402BDC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 800 700 0.04 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.05 VGS = 4.5 V 0.03 VGS = 10 V 0.02 Ciss 600 500 400 300 200 0.01 Coss Crss 100 0.00 0 0 4 8 12 16 0 20 5 10 ID − Drain Current (A) 20 25 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 4.9 A VGS = 10 V ID = 4.9 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 15 6 4 2 1.2 1.0 0.8 0 0 2 4 6 8 0.6 −50 10 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.08 ID = 4.9 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 73051 S-41495—Rev. A, 09-Jun-04 1.4 1.6 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si5402BDC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 50 0.4 40 ID = 250 mA −0.0 30 Power (W) V GS(th) Variance (V) 0.2 −0.2 −0.4 20 −0.6 10 −0.8 −1.0 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 1 TJ − Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 0.1 P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 BVDSS Limited dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73051 S-41495—Rev. A, 09-Jun-04 Si5402BDC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 73051 S-41495—Rev. A, 09-Jun-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5