Si1023X Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 • TrenchFET® Power MOSFET: 1.8 V Rated 1.6 at VGS = - 2.5 V - 300 • Very Small Footprint 2.7 at VGS = - 1.8 V RoHS COMPLIANT • High-Side Switching - 150 • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • Gate-Source ESD Protected: 2000 V SOT-563 SC-89 BENEFITS S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 • Ease in Driving Switches Marking Code: B • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation Top View APPLICATIONS Ordering Information: Si1023X-T1-E3 (Lead (Pb)-free) Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain TA = 25 °C TA = 85 °C Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) - 390 IS TA = 25 °C TA = 85 °C PD V - 370 - 280 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 265 - 650 - 450 - 380 280 250 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71169 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1023X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.45 Typ. Max. Unit µA Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ±1 ±2 Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V - 0.3 - 100 nA -5 µA On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Forward Transconductancea Diode Forward Voltage VDS = - 16 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V a - 700 mA VGS = - 4.5 V, ID = - 350 mA 0.8 1.2 VGS = - 2.5 V, ID = - 300 mA 1.2 1.6 VGS = - 1.8 V, ID = - 150 mA 1.8 2.7 gfs VDS = - 10 V, ID = - 250 mA 0.4 VSD IS = - 150 mA, VGS = 0 V - 0.8 RDS(on) Resistancea V Ω S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time td(on) Turn-Off Time td(off) 1500 VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA pC 150 450 VDD = -10 V, RL = 47 Ω ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω 14 ns 46 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1000 VGS = 5 thru 3 V TJ = - 55 °C 2.5 V 0.6 2V 0.4 1.8 V 0.2 0.0 0.0 600 125 °C 400 200 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 25 °C 800 I D - Drain Current (mA) I D - Drain Current (A) 0.8 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71169 S-80643-Rev. B, 24-Mar-08 Si1023X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 120 VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V Ciss 80 60 40 Coss 0.8 20 Crss 0.0 0 0 200 400 600 800 1000 0 4 8 12 16 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 5 VDS = 10 V ID = 250 mA 1.4 3 2 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 1.0 0.8 1 0 0.0 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) VGS = 0 V f = 1 MHz 100 3.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 - 50 1.6 - 25 0 25 50 75 100 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1000 125 5 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = - 55 °C 10 1 0.0 4 3 ID = 350 mA 2 ID = 200 mA 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Sour ce-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71169 S-80643-Rev. B, 24-Mar-08 6 www.vishay.com 3 Si1023X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.3 3.0 2.5 ID = 0.25 mA 0.1 2.0 IGSS - (µA) VGS(th) Variance (V) 0.2 0.0 VGS = 4.5 V 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 TJ - Temperature (°C) 50 75 100 125 TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 25 IGSS vs. Temperature 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71169. www.vishay.com 4 Document Number: 71169 S-80643-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1