Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED • Typical WCDMA Performance at 28 V - Average Output Power = 20 W atts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels ±5 MHz, peak/avg 8.5:1 at 0.01% CCD) Typi cal Singl e Carrier WCDMA Perfor mance 25 Efficiency ACPR (dBc )x -40 20 Gain -45 15 -50 10 ACPR -55 V DD = 28 V IDQ = 1.45 A f = 2170 MHz -60 0 5 10 15 20 5 0 Typical CW Performance at 28 V - Output Power at P1-dB = 120 W atts - Gain = 13 dB - Efficiency = 48% Gain (dB) & Efficiency (%) -35 Full Gold Metallization Integrated ESD Protection; Class 1 (minimum) Human Body Model Excellent Thermal Stability Broadband Internal Matching Low HCI Drift Capable of Handling 10:1 VSWR @ 28 V , 120 Watts (CW) Output Power 25 Output Pow er (Watts ) Guaranteed Performance WCDMA Measurements (in test fixture) VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1 Characteristic Symbol Adjacent Channel Power Ratio Min Typ Max Units ACPR — -45 -40 dB Gain Gps 13 14.5 — dB Drain Efficiency ıD 19 22 — % Two-Tone Measurements (in test fixture) VDD = 28 V, IDQ = 1.20 A, POUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz Characteristic Symbol Min Typ Max Units Gain Gps 12.5 14 — dB Drain Efficiency ıD 31 36 — % Intermodulation Distortion IMD -27 -30 — dBc All published data at TCASE = 25°C unless otherwise indicated. www.peakdevices.com� � � � � � � � � 720-406-1221 PD21120R6 Electrical Characteristics (Guaranteed) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 1 µA/Side V(BR)DSS 65 — — Volts Drain Leakage Current VDS = 28 V, VGS = 0 V/Side IDSS — — 1.0 µA On-State Resistance VGS = 10 V, IDS = 1 A/Side RDS(on) — 0.13 — Ohms Quiescent Current Gate Voltage VDS = 28 V, ID = 700 mA/Side VGS(Q) 2.5 3.4 4 Volts Gate Leakage Current VGS = 10 V, VDS = 0 V/Side IGSS — — 100 nA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Volts Gate-Source Voltage VGS +15, -0.5 Volts Operating Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 330 Watts 1.88 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) Rı JC 0.55 °C/W Typical Performance IMD vs. Output Pow er (PEP) 40 0 35 -5 Efficiency 25 20 15 IRL -20 Gain 10 5 0 2100 -15 -25 V DD = 28 V, IDQ = 1.2 A POUT = 120 W PEP 2120 2140 2160 IM3 -30 IDQ = 1.6 A -50 IDQ = 1.2 A � IDQ = 1.0 A -60 -70 1 Freque nc y (MHz) www.peakdevices.com� IDQ = 1.4 A -35 -40 2200 2180 V DD = 28 V, f = 2170 MHz -Tone Spacing = 100 kHz -40 -10 IMD (dBc ) x 30 -30 IRL & IMD Gain (dB) & Efficiency (%) Broa dba nd Li ne arity Perfor mance 10 100 1000 Output Pow er (Watts PEP) � � � � � � � 720-406-1221 PD21120R6 Typical Performance (cont.) IMD vs. Output Pow er Efficiency Efficiency IM3 -40 32 IM5 -50 IM7 24 16 -60 8 -70 0 140 0 20 40 60 80 100 120 15 Power Gain (dB) V DD = 28 V IDQ = 1.2 A -30 IMD dBc Pow er Gain vs. Output Pow er 40 14 13 IDQ = 1.6 A IDQ = 1.4 A 12 IDQ = 1.2 A IDQ = 1.0 A 11 10 1 10 Output Pow er (Watts -PEP) 180 0.80 3.07 0.99 5.33 0.98 7.60 0.97 0.95 -20 30 80 25 V GS = 0 V f = 1 MHz 120 20 100 15 80 Cds 60 40 10 5 Cdg 20 12.13 Case Temperature (°C) Cgs 140 9.87 0.96 30 160 1.01 1.00 1000 Capa citance vs. Suppl y Voltage (per side ) * Voltage normalized to 1.0 V Series show current (A) Cds & Cgs (pF)x Bias Voltage (V) 1.02 100 Output Pow er (Watts CW) Gate-Source Voltage vs. Case Temperature 1.03 V DD = 28 V 0 0 0 130 Cdg (pF) x -20 10 20 30 40 Supply Voltage (Volt s) * This part is internally matched. Measurements of the finished product will not yield these results. www.peakdevices.com� � � � � � � � � 720-406-1221 PD21120R6 Broadband Circuit Impedance Z0 = 50 ı VDD = 28 V, IDQ = 1.2 A, Pout = 20 W Avg 2 Tone 1 MHz Spacing Z Source Z Load D S G G D Frequency Z Source ı Z Load ı MHz R jX R jX 2100 5.2 -6.58 2.52 -7.6 2110 5.0 -6.62 2.48 -6.8 2140 4.9 -6.73 2.56 -6.2 2170 4.8 -6.85 2.62 -5.78 2200 4.7 -7.10 2.72 -5.17 Test Circuit www.peakdevices.com� � � � � � � � � 720-406-1221 PD21120R6 Test Circuit (cont.) Test Circuit Schematic for 2170 MHz DUT ı 1, ı 21 ı2 ı3 ı 4, ı 14 ı 5, ı 7 ı 6, ı 8 ı 9, ı 15 ı 10, ı 16 ı 11, ı 17 ı 12, ı 18 ı 13 ı 19 ı 20 PTF 102003 0.02ˇ �@ 2170 MHz 0.07ˇ � ˇ@ 2170 MHz 0.26ˇ � ˇ@ 2170 MHz 0.50ˇ � ˇ@ 2170 MHz 0.03ˇ � ˇ@ 2170 MHz 0.08ˇ � ˇ@ 2170 MHz 0.04ˇ � ˇ@ 2170 MHz 0.06ˇ � ˇ@ 2170 MHz 0.26ˇ � ˇ@ 2170 MHz 0.02ˇ � ˇ@ 2170 MHz 0.42ˇ � ˇ@ 2170 MHz 0.27ˇ � ˇ@ 2170 MHz 0.05ˇ � ˇ@ 2170 MHz LDMOS Transistor Microstrip 29.20 ı Microstrip 50 ı Microstrip 20.10 ı Microstrip 15.50 ı Microstrip 13.10 ı Microstrip 6.80 ı Microstrip 5.50 ı Microstrip 13.10ˇ ı Microstrip 53.60ˇ ı Microstrip 10.40ˇ ı Microstrip 53.60ˇ ı Microstrip 20.10ˇ ı Microstrip 50 ı C1, C5, C8, C13 C2, C3, C7, C9, Capacitor, 10 µF, 35 V, Tant TE Series SMD, Digi-Key PCS6106TR Capacitor, 6.8 pF, 100A 6R8 Capacitor, 1.6 pF, ATC 600B 1R6 BW Capacitor, 5.6 pF, 100B 5R6 Capacitor, 0.1 µF, 50 V, Digi-Key PCC103BCT Capacitor, 3.3 pF, ATC 600B 3R3 BW Connector, SMA Female, Panel Mount Resistor, 3.3 K ohms, 1/16W 5% 0603 Digi-Key P3.3K GCT Resistor, 1 K ohms, 1/16W 5% 0603 Digi-Key P1.0K GCT 4003, .020", 1 oz. copper both sides, 1 layer. AlliedSignal C6 C4 C12 C14 C10, C11 J1, J2 R1, R4 R2, R3 PCB Assembly Diagram (not to scale) www.peakdevices.com� � � � � � � � � 720-406-1221 PD21120R6 Case Outline Specifications Case 20275 Peak Devices, Inc 2100 Central Ave, Suite 200 Boulder, Co 80301 www.peakdevices.com� � � � � � � � � 720-406-1221