PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 16.0 dB Typ - Drain Efficiency = 50% Typ • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 60 Efficiency 140 45 100 30 VDD = 28.0 V IDQ = 1.5 A Total f = 880 MHz 60 15 Efficiency (%) Output Power (Watts) 180 1016 5600 1 5 1234 5 Output Power 20 0 0 1 2 3 4 5 6 7 8 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.5 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 893.9, 894 MHz—all phase angles at frequency of test) Symbol Min Typ Max Units Gps 15.0 16.0 — dB P-1dB 165 180 — Watts h 45 50 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10161 Electrical Characteristics (per side) (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 4.3 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.5 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD Above 25°C derate by 500 Watts 2.85 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.35 °C/W (1) per side Typical Performance Typical POUT (at P-1dB), Gain & Efficiency vs. Frequency 225 Gain 14 125 VDD = 28 V 12 IDQ = 1.5 A Total Efficiency (%) 10 865 870 875 880 885 890 75 25 895 40 VDD = 28 V 12 30 IDQ = 1.5 A Total 10 8 865 Return Loss (dB) POUT = 165 W 870 875 880 885 Frequency (MHz) Frequency (MHz) 2 890 -205 -10 -15 10 -20 -25 0 895 Efficiency 175 Gain (dB) 50 Return Loss 16 Efficiency (%) 14 Gain (dB) Output Power (W) 60 Gain Output Power & Efficiency 18 Broadband Test Fixture Performance 16 e PTF 10161 Typical Performance (cont.) Output Power vs. Supply Voltage Intermodulation Distortion vs. Output Power -10 VDD = 28 V 180 -20 160 140 IMD (dBc) Output Power (Watts) 200 120 100 IDQ = 1.5 A Total f = 894 MHz 80 ICQ = 1.5 A Total f2 = 880.1 MHz -40 -50 60 40 -60 18 20 22 24 26 28 30 30 50 70 90 600 1.03 1.02 Bias Voltage (V) 85 500 400 65 VGS = 0 V f = 1 MHz 55 45 35 Crss (pF) 75 Cgs Cds 25 100 Crss 0 0 10 20 30 150 170 Voltage normalized to 1.0 V Series show current (A) 95 200 130 Gate-Source Voltage vs. Case Temperature Capacitance vs. Supply Voltage (per side) * 300 110 Output Power (Watts-PEP) Supply Voltage (Volts) Cds & Cgs (pF) . 3rd order f1 = 880.0 MHz -30 1.01 1.00 5 0.98 8.32 0.97 11.6 15 0.96 5 0.95 40 1.72 0.99 14.84 18.12 -20 Supply Voltage (Volts) 5 30 55 Case Temperature (°C) *This part is internally matched. Measurements of the finished product will not yield these figures. 3 80 105 e PTF 10161 --- > Impedance Data MHz R jX R jX 860 2.3 1.6 1.60 -1.1 870 1.9 0.8 1.70 -1.7 880 1.8 0.3 1.90 -2.1 890 1.7 0.1 1.95 -1.8 900 1.6 -0.2 1.80 -1.5 4 0.1 0.0 Z Load W 860 MHz 900 MHz 860 MHz Z Load 0.1 W Z Source W Frequency Z Source EN AVE L D DTOW ARD LOA G TH S - W AVELENGT HS S G G Z0 = 50 W RD G Z Load TO W A D 0.1 Z Source ENE RAT OR 0.2 VDD = 28 V, IDQ = 1.5 A Total, POUT = 165 W 900 MHz e PTF 10161 Test Circuit Schematic for f = 894 MHz D1, D2 l1, l28 l2 l3 l4, l25 l5, l24 l6, l23 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 l19, l 20 l21, l22 l 26 l 27 Circuit Board PTF 10161 0.255 l 894 MHz Microstrip 52.3 W 0.121 l 894 MHz Microstrip 22.1 W 0.097 l 894 MHz Microstrip 37.3 W 0.482 l 894 MHz Microstrip 27.8 W 0.016 l 894 MHz Microstrip 27.8 W 0.052 l 894 MHz Microstrip 27.8 W 0.013 l 894 MHz Microstrip 22.2 W 0.065 l 894 MHz Microstrip 22.2 W 0.048 l 894 MHz Microstrip 13.1W 0.024 l 894 MHz Microstrip 10.4 W 0.017 l 894 MHz Microstrip 10.3 W 0.105 l 894 MHz Microstrip 8.4 W 0.080 l 894 MHz Microstrip 8.4 W 0.010 l 894 MHz Microstrip 8.4 W 0.120 l 894 MHz Microstrip 37.3 W 0.093 l 894 MHz Microstrip 28.9 W .031” Thick, er = 4.0, 2 oz. Copper, G200, Cirexx C1, C8, C12, C19 Capicitor, Ceramic Chip, .01 µF Digi-Key PCC103BNCT-ND C2, C9, C14, C15, C21, C22 Capicitor, 10 µf, 35V, Tantalum TE series SMD Digi-Key PCS6 106TR-ND C3, C10, C13, C17, C18, C20 Capicitor, 33 pF 100B 330 C4, C7 Capicitor, 15 pF 100B 150 C6 Capicitor, 11 pF 100B 110 C5 Capicitor, 1.7 pF 100B 1R7 C11 Capicitor, 3.0 pF 100B 3R0 C16 Capicitor, 5.1 pF 100B 5R0 J1, J2 Connector, SMA, Female, Panel Mount 1301-RPM 513 412/53 L1, L2 4 Turns, 22 AWG, .120” I.D. R1, R2, R3, R4 Chip Resistor 1/8W-5% SMD, 510 ohm 1206 Digi-Key PXX*KECT-ND R5, R6 Resistor, 220 ohm Digi-Key 220QBK-ND 5 e PTF 10161 Test Circuit (cont.) 10161 e Assembly Diagram (not to scale) Artwork (not to scale) 6 e PTF 10161 Case Outline Specifications Package 20250 1 1 2 3 3 Primary dimensions are inches; alternate dimensions are mm. Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 7 Specifications subject to change without notice. L3 © 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10161 Uen Rev. A 01-16-01