PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Typical Output Power & Efficiency vs. Input Power 20 • INTERNALLY MATCHED • Performance at 960 MHz, 26 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • Surface Mountable • Available in Tape and Reel • 100% Lot Traceability 70 16 60 12 50 8 Output Power 4 VDD = 26 V 40 IDQ = 160 mA f = 960 MHz 30 0 Efficiency (%) x Output Power (Watts) Efficiency 1019 3 1234 1 01 A5-1600 234 089A3 5 600 08 20 0.0 0.2 0.4 0.6 Input Power (Watts) Package 20259 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gps 17.0 18 — dB P-1dB 12 14 — Watts Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) h 55 60 — % Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 160 mA, f = 921 MHz Y — — 10:1 — Common Source Power Gain (VDD = 26 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 26 V, IDQ = 160 mA, f = 960 MHz) —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10193 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs — 0.9 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 58 Watts 0.33 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to 150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.0 °C/W Typical Performance 70 46 Gain (dB) VDD = 26 V 14 IDQ = 160 mA 12 Gain (dB) Gain 16 Output Power (W) 34 16 Gain (dB) VDD = 26 V 880 900 IDQ = 160 mA POUT = 10 W -10 20 12 22 920 940 10 960 8 920 Frequency (MHz) 930 940 Frequency (MHz) 2 40 - 5 30 Return Loss (dB) 10 860 60 50 58 Output Power & Efficiency Efficiency (%) 18 Efficiency (%) 20 950 -15 10 -20 0 960 Return Loss 20 Efficiency Broadband Test Fixture Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10193 Output Power (at 1 dB Compression) vs. Supply Voltage Power Gain vs. Output Power 20 20 VDD = 26 V f = 960 MHz IDQ = 160 mA Output Power (Watts) 18 17 IDQ = 80 mA 16 IDQ = 45 mA 15 18 16 14 IDQ = 160 mA f = 960 MHz 12 10 14 0 1 10 22 100 24 Intermodulation Distortion vs. Output Power VDD = 26 V, IDQ =160 mA 6 45 Cds and Cgs (pF) 3rd Order -20 f2 =960.000 MHz -30 5th -40 7th -50 5 40 35 Cgs 4 30 VGS = 0 V f = 1 MHz 25 20 -60 2 1 Crss 0 6 9 12 15 18 0 Output Power (Watts-PEP) 10 20 30 0 40 Supply Voltage (Volts) Gate-Source Voltage vs. Case Temperature Gate-Source Voltage (Normalized) 3 3 Cds 15 10 5 0 30 50 -10 f = 959.900 MHz 1 IMD (dBc) 28 Capacitance vs. Supply Voltage * (as measured in a broadband circuit) 0 26 Supply Voltage (Volts) Output Power (Watts) 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.075 0.33 0.585 0.84 1.095 1.35 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) * This part is internally matched. Measurements of the finished product will not yield these figures. 3 Crss (pF) Power Gain (dB) 19 e PTF 10193 Impedance Data VDD = 26 V, IDQ = 160 mA, P-1dB = 12 W Z Source W Frequency D Z Load W Z Source MHz R jX R jX 860 2.0 2.7 5.8 4.4 880 2.0 2.6 5.5 4.6 900 2.0 2.4 5.0 5.0 920 1.9 2.3 4.8 5.1 960 1.9 2.1 4.7 5.3 Z Load G S Z0 = 50 W Typical Scattering Parameters (VDS = 26 V, ID = 400 mA) f (MHz) Mag 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 -0.284 -0.266 -0.241 -0.243 -0.231 -0.223 -0.231 -0.233 -0.241 -0.250 -0.287 -0.325 -0.397 -0.539 -0.839 -1.45 -1.98 -1.33 -0.689 -0.379 -0.231 -0.170 -0.123 -0.101 -0.072 S11 Ang Mag -169 -171 -172 -173 -175 -176 -177 -178 -179 -180 179 178 177 176 174 174 180 -175 -176 -177 -178 -179 -180 179 179 12.4 10.7 9.20 7.86 6.68 5.74 4.90 4.22 3.77 3.53 3.36 3.54 4.04 4.89 6.06 7.55 8.01 5.76 2.23 -1.11 -4.10 -6.82 -9.12 -11.2 -13.2 S21 Ang Mag 47.8 41.6 36.1 31.2 26.7 22.6 18.8 14.9 11.3 7.19 2.91 -1.78 -7.86 -15.7 -27.7 -47.7 -79.6 -113 -134 -146 -155 -159 -164 -167 -170 -42.7 -43.7 -44.7 -45.4 -46.7 -47.6 -48.7 -49.6 -50.7 -51.5 -52.3 -53.1 -53.4 -53.4 -52.4 -50.9 -49.6 -49.5 -50.5 -50.5 -50.5 -50.2 -49.8 -49.3 -49.1 4 S12 Ang Mag -34.2 -38.9 -41.9 -45.0 -47.2 -49.8 -51.6 -50.6 -50.0 -51.1 -48.2 -50.9 -52.3 -56.9 -68.8 -97.0 -140 175 147 127 118 109 104 101 99.7 -1.62 -1.34 -1.24 -1.08 -0.958 -0.852 -0.818 -0.697 -0.633 -0.593 -0.576 -0.449 -0.391 -0.342 -0.247 -0.114 -0.232 -0.463 -0.527 -0.535 -0.552 -0.463 -0.470 -0.493 -0.466 S22 Ang -99.9 -108 -115 -121 -126 -131 -135 -138 -141 -144 -146 -148 -150 -152 -154 -156 -159 -160 -161 -162 -162 -163 -164 -164 -165 e PTF 10193 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3 l4 l5 l6 l7 PTF 10193 0.1425 l 960 MHz 0.1309 l 960 MHz 0.1640 l 960 MHz 0.0174 l 960 MHz 0.1916 l 960 MHz 0.0535 l 960 MHz 0.0321 l 960 MHz Microstrip 50 W Microstrip 9.29 W Microstrip 9.29 W Microstrip 29.4 W Microstrip 11.72 W Microstrip 50 W Microstrip 50 W C1, C2, C4, C7 C3 C5 C6 C8 C9 R1, R2, R3 L1 Circuit Board Assembly Diagram (not to scale) 5 Capacitor, 36 pF 100B 360 Capacitor, 5.1 pF 100A 5R1 Capacitor, 0.1 mF, 50 V DIGI-KEY P4525-ND Capacitor, 100 mF, 50 V DIGI-KEY P5182-ND Capacitor, 3.6 pF 100B 3R6 Capacitor, 2.7 pF 100B 2R7 Resistor, 220 W DIGI-KEY 220QBK-ND 4 Turns, 20 AWG, .120 I.D.N/A G200, .031" Thick, 2 oz. Copper er = 4.00, AlliedSignal e PTF 10193 Test Circuit Artwork (not to scale) Case Outline Specifications Package 20259 Ericsson Inc. MIcroelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1999, 2000 Ericsson Inc. EUS/KR 1522 -PTF 10193 Uen Rev. A 12-07-00