PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 70 Watts - Power Gain = 16.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 100 60 80 50 60 40 VDD = 26 V IDQ = 750 mA f = 960 MHz 40 20 30 e Efficiency (%) x Output Power (Watts) Efficiency 1014 3456 9 99 A-12 35 20 Output Pow er 0 10 0 1 2 Package 20252 3 Input Power (Watts) RF Specifications (100% tested) Characteristic Gain (VDD = 26 V, POUT = 70 W, IDQ = 750 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 750 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 70 W, IDQ = 750 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 70 W, IDQ = 750 mA, f = 921 MHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gpe 15.0 16.0 — dB P-1dB 70 75 — Watts h 47 50 — % Y — — 5:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10149 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 197 Watts 1.12 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.89 °C/W Typical Performance Gain (dB) x 15 100 13 80 11 9 920 VDD = 26 V Output Pow er (W) IDQ = 750 mA 60 Efficiency (%) 930 940 950 40 960 60 50 16 Gain 40 VDD = 26 V IDQ = 750 mA POUT = 70 W 12 -30 5 20 -15 8 Return Loss 4 920 Frequency (MHz) 930 940 Frequency (MHz) 2 950 10 -25 0 -35 960 Efficiency Gain (dB) Broadband Test Fixture Performance Efficiency (%) Gain (dB) 120 Output Power & Efficiency 17 20 Return Loss (dB)x Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10149 Power Gain vs. Output Power Output Power vs. Supply Voltage 80 IDQ = 750 17 16 IDQ = 375 VDD = 26 V f = 960 MHz 15 IDQ = 187 70 60 IDQ = 750 mA f = 960 MHz 50 40 14 1 10 22 100 24 Intermodulation Distortion vs. Output Power VDD = 26 V, IDQ = 750 mA f1 = 942 MHz, f2 = 942.1 MHz IM 3 -30 -40 IM 5 -50 IM 7 -60 20 30 40 50 60 70 200 180 160 140 120 100 80 60 40 20 0 80 40 Cgs 35 30 25 VGS = 0 V f = 1 MHz Cds 20 15 10 Crss 5 0 0 Output Power (Watts-PEP) 10 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) IM3 (dBc) Cds & Cgs (pF) x -10 10 30 Capacitance vs. Supply Voltage * (as measured in a broadband circuit) 0 28 Supply Voltage (Volts) Output Power (Watts) -20 26 1.01 1.00 0.40 0.99 1.53 2.67 0.98 3.80 0.97 4.93 0.96 6.07 0.95 -20 30 80 Temp. (°C) 3 130 Crss (pF) x Power Gain (dB) Output Power (Watts) 18 e PTF 10149 Impedance Data Z0 = 10 W (VDD = 26 V, POUT = 70 W, IDQ = 700 mA) D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 920 1.45 -0.64 1.40 1.08 930 1.44 -0.60 1.43 1.06 940 1.43 -0.55 1.45 1.05 950 1.42 -0.34 1.50 1.03 960 1.40 -0.21 1.55 1.02 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 PTF 10149 0.0633 l 960 GHz 0.1142 l 960 GHz 0.0821 l 960 GHz 0.1294 l 960 GHz 0.0468 l 960 GHz 0.0481 l 960 GHz 0.0441 l 960 GHz 0.2500 l 960 GHz 0.1398 l 960 GHz 0.0821 l 960 GHz 0.0226 l 960 GHz 0.0109 l 960 GHz 0.0504 l 960 GHz 0.034 l 960 GHz LDMOS Field Effect Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 9.18 W Microstrip 9.18 W Microstrip 6.79 W Microstrip 6.79 W Microstrip 59 W Microstrip 6.79 W Microstrip 50 W Microstrip 9.69 W Microstrip 9.69 W Microstrip 50 W Microstrip 50 W C1, C3, C8, C12 33 pF Capacitor ATC 100 B C2 1.3 pF, 50 V Capacitor, ATC 100 B C4 Not Used C5, C6, C7 7.5 pF Capacitor, ATC 100 B C9 100 mF, 50 V Capacitor, Digi-Key P5182-ND C10 0.1 uF, 50 V Capacitor, Digi-Key P4525-ND C11 0.3 pF Capacitor ATC 100 B R1, R2 1K Resistor, Digi-Key 1KQBK L1, L2 4 Turn, 20 AWG, .120” I.D. Circuit Board .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper 4 e PTF 10149 10149 A-1234569935 Assembly Diagram Artwork (not to scale) 5 e PTF 10149 Case Outline Specifications Package 20252 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10149 Uen Rev. B 12-19-00