PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • Excellent Thermal Stability • 100% Lot Traceability Output Power and Efficiency vs. Input Power 40 80 70 30 60 50 Efficiency 20 40 30 VDD = 28 V 10 e Efficiency Output Power (Watts) Output Power 10 065 123 456 992 1A 20 IDQ = 380 mA f = 1.99 GHz 10 0 0 0 1 2 3 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) ACPR (40 Walsh Codes) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) Symbol Min Typ Max Units Gps — 11.0 — dB - 50 — — dBc - 62 — — dBc ±885 KHz ACPR ±1.98 MHz ACPR Gain Flatness (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.930–1.990 GHz) GDf — — 0.7 dB Drain Efficiency (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.99 GHz) hD 9 — — % All published data at TCASE = 25°C unless otherwise indicated. (table continues next page) e 1 e PTF 10065 RF Specifications (cont.) (100% Tested) Characteristic Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 380 mA, f = 1.99 GHz) Symbol Min Typ Max Units P-1dB 30 — — Watts Y — — 10:1 — Rtn Loss 10 — — dB f –10 — +10 Deg. Symbol Min Typ Max Units V(BR)DSS 62 — — Volts Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1.99 GHz—all phase angles at frequency of test) Input Return Loss (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) Insertion Phase (Referenced to Correlation Devices) (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.96 GHz) Electrical Characteristics (cont.) (100% Tested) (100% Tested) Characteristic Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) — 3.8 — Volts Forward Transconductance VDS = 10 V, ID = 6 A gfs — 1.8 — Siemens Gate-Source Leakage VGS = 10 V IGSsf — — 1 mA Gate Quiescent Voltage VDS = 28 V, ID = 380 mA VGS(q) 3.0 — 5.0 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 62 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 120 Watts 0.7 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.4 °C/W 2 e PTF 10065 Typical Performance 80 80 x Efficiency (% ) 11 Gain 60 VDD = 28 V Gain (dB) IDQ = 380 m A 50 10 40 Output Power (W ) 9 1930 1945 30 1960 1975 P OUT = 30 W Gain -605 -15 50 -25 10 Return Loss 20 1990 9 1930 1945 1960 1975 -35 40 1990 Frequency (MHz) Gain vs. Frequency Power Gain vs. Output Power 12.0 12 IDQ = 380 mA 11 11.8 9 Gain (dB) x 10 IDQ = 180 mA 8 7 6 5 VDD = 28 V f = 1990 MHz IDQ = 90 mA 0 10 11.6 VDD = 28 V 11.4 IDQ = 380 mA POUT = 3 W 11.2 4 11.0 1930 1000 1940 1950 Output Power (Watts) 1960 1970 1980 1990 Frequency (MHz) ACPR vs. W-CDMA Output Power Output Power (@ 1 dB Compression) vs. Supply Voltage (as measured in a broadband circuit) -30 40 VDD = 28 V 35 IMD (dBc) x Output Power (Watts) 70 11 Fre que ncy (M Hz) Power Gain (dB) VDD = 28 V, IDQ = 380 mA Efficiency Gain (dB) x 70 Return Loss (dB) xx Efficiency (%) Broadband Test Fixture Performance 12 Output Power & Efficiency 12 Typical P OUT , Gain & Efficiency (at P-1dB) vs. Frequency 30 25 20 IDQ = 380 mA f = 1990 MHz 15 IDQ = 380 mA -40 f = 1930 MHz f = 1990 MHz -50 f = 1960 MHz -60 10 24 25 26 27 28 29 30 30 Supply Voltage (Volts) 35 40 Output Power (dBm) 3 45 e PTF 10065 Typical Performance (cont.) Gate-Source Voltage vs. Case Temperature Capacitance vs. Supply Voltage * Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.200 0.99 0.692 0.98 1.183 0.97 1.675 2.167 0.96 20 40 60 80 6 5 Cgs 4 60 3 Cds 40 2 20 1 Crss 0 0.95 0 VGS = 0 V f = 1 MHz 80 2.658 -20 7 100 Cds and Cgs (pF) Gate-Source Voltage 120 0 0 100 Crss 1.03 10 20 30 40 Supply Voltage (Volts) Case Temperature (°C) * This part is internally matched. Measurements of the finished product will not yield these results. Impedance Data (VDD = 28 V, POUT = 30 W, IDQ = 380 mA) Z0 = 50 W D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 1930 11.2 -10.50 2.79 -4.32 1945 11.8 -9.23 2.62 -4.23 1960 12.4 -8.01 2.45 -4.14 1975 13.0 -6.79 2.27 -4.05 1990 13.6 -5.56 2.10 -3.96 4 e PTF 10065 Test Circuit Test Circuit Schematic for f = 1990 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 PTF 10065 0.072 l 1990 MHz 0.118 l 1990 MHz 0.063 l 1990 MHz 0.043 l 1990 MHz 0.045 l 1990 MHz 0.097 l 1990 MHz 0.028 l 1990 MHz 0.244 l 1990 MHz 0.250 l 1990 MHz 0.110 l 1990 MHz LDMOS Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip11.23 W Microstrip 9.97 W Microstrip 9.97 W Microstrip 50 W Microtrip 67.35 W Microstrip 80.25 W C2, C10 C3 C4, C8, C1, C7 C5 C6 C9 J1, J2 L1 L2 R1, R2 R3 PCB e PTF 10065 Assembly Diagram (not to scale) 5 Capacitor, 10 µF, 35V Digi-Key PC56106-ND Capacitor, 0.1 µF Digi-Key P4525-ND Capacitor, 10pF 100B 100 Capacitor, 1.2 pF 100B 1R2 Capacitor, 0.7 pF 100B 0R7 Capacitor, 0.1 µF ATC 200B Connector, SMA, Female, Panel Mount Inductor, 15 nH 4 mm Ferrite Bead Philips BD 53/3/4.6-452 Resistor, 220 ohm 1/4W Digi-Key P220ECT-ND Resistor, 1.0 ohm Digi-Key P1.0 ECT 0.031” Thick, 2 oz Copper Both Sides, AlliedSignal G200 e PTF 10065 Test Circuit (cont.) e ERICSSON 10048/10144_D PTF 10065 Artwork (not to scale) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 2000 Ericsson Inc. EUS/KR 1522-PTF 10065 Uen Rev. A 12-14-00