ERICSSON PTF10195

PTF 10195
125 Watts, 869–894 MHz
GOLDMOS ® Field Effect Transistor
Description
•
•
The 10195 is an internally matched 125–watt GOLDMOS FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
•
•
•
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
Full Gold Metallization
Excellent Thermal Stability
100% Lot Traceability
Typical Power Output and Efficiency
vs. Input Power
64
140
56
120
48
Efficiency
100
40
80
32
VDD = 28 V
60
Power Output
20
24
IDQ = 1.3 A
f = 894 MHz
40
16
Efficiency (%)
Power Output (Watts)
160
1019
5600 5
-A
1234
8
0
0
0
1
2
3
4
5
6
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 1300 mA, f = 894 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz
—all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gpe
13
14
—
dB
P-1dB
125
140
—
Watts
h
45
53
—
%
Y
10:1
—
—
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10195
Electrical Characteristics
Characteristic
(100% Tested)
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Drain-Source Leakage Current
VDS = 26 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 100 mA
Forward Transconductance
VDS = 10 V, ID = 3 A
Symbol
Min
Typ
Max
Units
V(BR)DSS
65
—
—
Volts
IDSS
—
—
1.0
mA
VGS(th)
3.0
—
5.0
Volts
gfs
—
3.0
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
266
Watts
1.52
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
.66
°C/W
Typical
Performance
Test
Circuit
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
18
Output Power (W)
VDD = 28 V
16
120
IDQ = 1.3 A
Gain (dB)
14
80
12
40
Efficiency (%)
16
Gain (dB)
160
Output Power &
Efficiency
Gain
18
65
Efficiency
14
45
Gain
VDD = 28 V
12
IDQ = 1.3 A
10
8
6
874
879
884
889
0
894
2
869
Frequency (MHz)
874
879
Frequency (MHz)
2
35
25
15
0
5
-10
-5
-20
-15
Return Loss (dB)
-30
-25
884
889
894
POUT = 125 W
4
10
869
55
Efficiency (%)
200
Return Loss
20
Broadband Test Fixture Performance
20
e
PTF 10195
Output Power (@ 1 dB Compression)
vs. Supply Voltage
Power Gain vs. Output Power
17
VDD = 28 V
f = 894 MHz
16
130
Output Power (Watts)
Power Gain (dB)
IDQ = 1600 mA
IDQ = 1300 mA
15
IDQ = 1000 mA
14
120
110
IDQ = 1300 mA
f = 894 MHz
100
90
80
13
0
1
10
100
20
1000
22
Output Power (Watts)
Gate-Source Voltage vs. Case Temperature
26
28
30
Intermodulation Distortion vs. Output Power
1.04
(as measured in a broadband circuit)
1.03
-20
Voltage normalized to 1.0 V
Series show current (A)
1.02
VDD = 28 V, IDQ = 1.3 A
1.01
0.8
2.728
4.656
6.584
8.512
10.44
1.00
0.99
0.98
0.97
3rd Order
f1 = 894 MHz, f2 = 894.1 MHz
-30
IMD (dBc)
Bias Voltage (V)
24
Supply Voltage (Volts)
-40
5th
-50
7th
0.96
-60
0.95
10
-20
30
80
Case Temperature (°C)
20
130
30
40
50
Capacitance vs. Supply Voltage *
300
40
Cgs
35
30
200
VGS = 0 V
f = 1 MHz
Cds
150
25
20
15
100
Crss (pF)
Cds & Cgs (pF)
250
10
50
5
Crss
0
0
10
60
70
80
Output Power (Watts-PEP)
20
30
0
40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished product will not yield these figures.
3
90
100
e
PTF 10195
Impedance Data
OR
VDD = 28 V, POUT = 125 W, IDQ = 1300 mA
D
RAT
Z0 = 50 W
EN E
Z Load
TO W A
RD G
Z Source
0 .1
G
S
860
1.97
-1.13
2.30
0.99
869
1.86
-0.94
2.18
1.19
880
1.69
-0.73
2.00
1.38
894
1.52
-0.44
1.79
1.63
905
1.39
-0.22
1.69
1.85
860 MHz
905 MHz
0.2
905 MHz
jX
0.1
R
0 .0
jX
860 MHz
Z Source
0.1
AV
R
E LE N
MHz
Z Load
Z Load W
OA D T OW AR D L
G TH S
Z Source W
Frequency
Test Circuit
Test Circuit Schematic for f = 894 MHz
DUT
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
PTF 10195
LDMOS Transistor
0.0273 l 894 MHz Microstrip 50 W
0.0244 l 894 MHz Microstrip 30 W
0.0204 l 894 MHz Microstrip 30 W
0.1800 l 894 MHz Microstrip 30W
0.0715 l 894 MHz Microstrip 8.63W
0.0802 l 894 MHz Microstrip 8.63 W
0.1026 l 894 MHz Microstrip 8.63 W
0.0491 l 894 MHz Microstrip 8.63 W
0.0389 l 894 MHz Microstrip 30W
0.1411 l 894 MHz Microstrip 30 W
0.0116 l 894 MHz Microstrip 30 W
0.0428 l 894 MHz Microstrip 30 W
0.0293 l 894 MHz Microstrip 50 W
C1, C3, C8, C12
C2
C4, C5
C6
C7
C11
C13
C10
C9
J1,J2
L1
R1, R2,R3
Circuit Board
4
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100B 430
Capacitor, 4.3pF
100B 4R3
Capacitor, 5.6pF
100B 5R6
Capacitor, 7.5pF
100B 7R5
Capacitor, 9.1pF
100B 9R1
Capacitor, 5.1pF
100B 5R1
Capacitor, 3.6pF
100B 3R6
Capacitor, 0.1uF
Digi-KeyP4525-ND
Capacitor,100uF,50V
Digi-KeyP5182-ND
Connector, SMA, Female, Panel Mount
1301-RPM 513 412/53
7 Turns,22AWG,.120 DIA I.D. N/A
Resistor, 220ohm
Digi-Key 220QBK-ND
.031" thick, er = 4.0, G200 AlliedSignal
e
PTF 10195
Components Layout (not to scale)
10195_A INPUT
ERICSSON
ERICSSON
Artwork (not to scale)
5
10195_A OUTPUT
e
PTF 10195
Case Outline Specifications
Package 20248
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: [email protected]
www.ericsson.com/rfpower
6
Speciffications subject to change without notice.
L3
© 2000 Ericsson Inc.
EUS/KR 1522-PTF 10195 Uen Rev. A1 12-08-00