PTF 10195 125 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description • • The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. • • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability Typical Power Output and Efficiency vs. Input Power 64 140 56 120 48 Efficiency 100 40 80 32 VDD = 28 V 60 Power Output 20 24 IDQ = 1.3 A f = 894 MHz 40 16 Efficiency (%) Power Output (Watts) 160 1019 5600 5 -A 1234 8 0 0 0 1 2 3 4 5 6 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1300 mA, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gpe 13 14 — dB P-1dB 125 140 — Watts h 45 53 — % Y 10:1 — — — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10195 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current VDS = 26 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 100 mA Forward Transconductance VDS = 10 V, ID = 3 A Symbol Min Typ Max Units V(BR)DSS 65 — — Volts IDSS — — 1.0 mA VGS(th) 3.0 — 5.0 Volts gfs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 266 Watts 1.52 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC .66 °C/W Typical Performance Test Circuit Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 18 Output Power (W) VDD = 28 V 16 120 IDQ = 1.3 A Gain (dB) 14 80 12 40 Efficiency (%) 16 Gain (dB) 160 Output Power & Efficiency Gain 18 65 Efficiency 14 45 Gain VDD = 28 V 12 IDQ = 1.3 A 10 8 6 874 879 884 889 0 894 2 869 Frequency (MHz) 874 879 Frequency (MHz) 2 35 25 15 0 5 -10 -5 -20 -15 Return Loss (dB) -30 -25 884 889 894 POUT = 125 W 4 10 869 55 Efficiency (%) 200 Return Loss 20 Broadband Test Fixture Performance 20 e PTF 10195 Output Power (@ 1 dB Compression) vs. Supply Voltage Power Gain vs. Output Power 17 VDD = 28 V f = 894 MHz 16 130 Output Power (Watts) Power Gain (dB) IDQ = 1600 mA IDQ = 1300 mA 15 IDQ = 1000 mA 14 120 110 IDQ = 1300 mA f = 894 MHz 100 90 80 13 0 1 10 100 20 1000 22 Output Power (Watts) Gate-Source Voltage vs. Case Temperature 26 28 30 Intermodulation Distortion vs. Output Power 1.04 (as measured in a broadband circuit) 1.03 -20 Voltage normalized to 1.0 V Series show current (A) 1.02 VDD = 28 V, IDQ = 1.3 A 1.01 0.8 2.728 4.656 6.584 8.512 10.44 1.00 0.99 0.98 0.97 3rd Order f1 = 894 MHz, f2 = 894.1 MHz -30 IMD (dBc) Bias Voltage (V) 24 Supply Voltage (Volts) -40 5th -50 7th 0.96 -60 0.95 10 -20 30 80 Case Temperature (°C) 20 130 30 40 50 Capacitance vs. Supply Voltage * 300 40 Cgs 35 30 200 VGS = 0 V f = 1 MHz Cds 150 25 20 15 100 Crss (pF) Cds & Cgs (pF) 250 10 50 5 Crss 0 0 10 60 70 80 Output Power (Watts-PEP) 20 30 0 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these figures. 3 90 100 e PTF 10195 Impedance Data OR VDD = 28 V, POUT = 125 W, IDQ = 1300 mA D RAT Z0 = 50 W EN E Z Load TO W A RD G Z Source 0 .1 G S 860 1.97 -1.13 2.30 0.99 869 1.86 -0.94 2.18 1.19 880 1.69 -0.73 2.00 1.38 894 1.52 -0.44 1.79 1.63 905 1.39 -0.22 1.69 1.85 860 MHz 905 MHz 0.2 905 MHz jX 0.1 R 0 .0 jX 860 MHz Z Source 0.1 AV R E LE N MHz Z Load Z Load W OA D T OW AR D L G TH S Z Source W Frequency Test Circuit Test Circuit Schematic for f = 894 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 PTF 10195 LDMOS Transistor 0.0273 l 894 MHz Microstrip 50 W 0.0244 l 894 MHz Microstrip 30 W 0.0204 l 894 MHz Microstrip 30 W 0.1800 l 894 MHz Microstrip 30W 0.0715 l 894 MHz Microstrip 8.63W 0.0802 l 894 MHz Microstrip 8.63 W 0.1026 l 894 MHz Microstrip 8.63 W 0.0491 l 894 MHz Microstrip 8.63 W 0.0389 l 894 MHz Microstrip 30W 0.1411 l 894 MHz Microstrip 30 W 0.0116 l 894 MHz Microstrip 30 W 0.0428 l 894 MHz Microstrip 30 W 0.0293 l 894 MHz Microstrip 50 W C1, C3, C8, C12 C2 C4, C5 C6 C7 C11 C13 C10 C9 J1,J2 L1 R1, R2,R3 Circuit Board 4 Capacitor, 43pF 100B 430 Capacitor, 4.3pF 100B 4R3 Capacitor, 5.6pF 100B 5R6 Capacitor, 7.5pF 100B 7R5 Capacitor, 9.1pF 100B 9R1 Capacitor, 5.1pF 100B 5R1 Capacitor, 3.6pF 100B 3R6 Capacitor, 0.1uF Digi-KeyP4525-ND Capacitor,100uF,50V Digi-KeyP5182-ND Connector, SMA, Female, Panel Mount 1301-RPM 513 412/53 7 Turns,22AWG,.120 DIA I.D. N/A Resistor, 220ohm Digi-Key 220QBK-ND .031" thick, er = 4.0, G200 AlliedSignal e PTF 10195 Components Layout (not to scale) 10195_A INPUT ERICSSON ERICSSON Artwork (not to scale) 5 10195_A OUTPUT e PTF 10195 Case Outline Specifications Package 20248 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Speciffications subject to change without notice. L3 © 2000 Ericsson Inc. EUS/KR 1522-PTF 10195 Uen Rev. A1 12-08-00