MMDTC114W NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTC114W 10 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO - 6 to + 40 V IC 100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current Total Power Dissipation C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 5 mA hFE 68 - - - Collector Base Cutoff Current at VCE = 50 V ICEO - - 500 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 0.88 mA Collector Emitter Saturation Voltage at IC = 5 mA, IB = 0.25 mA VCEsat - - 0.3 V Input Off Voltage at VCE = 5 V, IC = 100 µA VI(off) - - 0.3 V Input On Voltage at VCE = 0.3 V, IC = 1 mA VI(on) 1.4 - - V fT - 250 - MHz Input Resistance R1 7 10 13 KΩ Resistance Ratio R2/R1 3.7 4.7 5.7 - Transition Frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 24/06/2006