MMDTA124W PNP Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA124W 22 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 10 V Input Voltage VI - 40 to + 10 V Collector Current -IC 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 60 - - - Collector Base Cutoff Current at -VCB = 50 V -ICBO - - 100 nA Collector Emitter Cutoff Current at -VCE = 30 V -ICEO - - 1 μA Emitter Base Cutoff Current at -VEB = 5 V -IEBO - - 180 μA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0. 5 mA -VCEsat - - 0.15 V Input Off Voltage at -VCE = 5 V, -IC = 100 µA -VI(off) - - 0.8 V Input On Voltage at -VCE = 0.3 V, -IC = 5 mA -VI(on) 2.5 - - V Input Resistance R1 15.4 22 28.6 KΩ Resistance Ratio R2/R1 0.8 1 1.2 - DC Current Gain at -VCE = 5 V, -IC = 5 mA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007