2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead(Pb)-Free 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol 2SD669 2SD669A Unit Collector-Emitter Voltage VCBO 180 180 V Collector-Base Voltage VCEO 120 160 V Emitter-Base Voltage VEBO 5.0 5.0 V Collector Current IC 1.5 A Power Disspation PD 1.0 W Junction Temperature Tj 150 ˚C Storage , Temperature Tstg -55 to +150 ˚C WEITRON http://www.weitron.com.tw 1/5 18-Oct-05 2SD669/2SD669A ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit V(BR)CBO 180 - - V V(BR)CEO 120 160 - - V V(BR)EBO 5.0 - - V Collector Cutoff Current VCB = 160V, IE=0 ICBO - - 10 µA Emitter Cutoff Current VEB = 4.0V, IC=0 IEBO - - 10 mA hFE(1) 60 60 - 320 200 hFE(2) 30 - - Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA VCE(sat) - - 1.0 V Base-Emitter ON Voltage VCE = 5.0V, IC = 150mA VBE(ON) - - 1.5 V fT - 140 - MHz Cob - 14 - pF Collector-Emitter Breakdown Voltage IC = 1.0mA, IE = 0 Collector-Base Breakdown Voltage 2SD669 IC = 10mA, IB = 0 2SD669A Emitter-Base Breakdown Voltage IC = 0, IE = 1.0mA ON CHARACTERISTICS DC Current Gain VCE = 5.0V, IC = 150mA 2SD669 2SD669A VCE = 5.0V, IC = 500mA Transition frequency VCE = 5.0V, IC = 150mA Collecotr Output Capacitance VCB = 10V, IE = 0, f = 1MHz - CLASSIFICATION OF hFE(1) B C D 2SD669 60-120 100-200 160-320 2SD669A 60-120 100-200 - Rank Range WEITRON http://www.weitron.com.tw 2/5 18-Oct-05 2SD669/2SD669A 3 Collector current IC (A) 20 10 100 (120 V, 0.04 A) 0.03 0.01 150 DC Operation(TC = 25°C) 0.1 (160 V, 0.02A) 2SD669 1 Case temperature TC (°C) 500 C TC = 25°C = 20 W 1.5 1 .0 0.2 0.5 mA 100 50 20 10 5 2 IB = 0 1 10 20 30 40 50 Collector to emitter voltage VCE (V) Fig.3 Typical Output Characteristecs 75°C Ta = 250 25 200 –25 150 100 50 1 VCE = 5 V 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) Fig.5 DC Current Transfer Ratio vs. Collector Current WEITRON http://www.weitron.com.tw 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) Fig.4 Typical Transfer Characteristics Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 300 0 1.2 IC = 10 IB 1.0 0.8 0.6 0.4 C 0 VCE = 5 V 200 5° C P 2.0 0.4 300 =7 0.6 100 T 0.8 30 Fig.2 Area of Safe Operation Collector current IC (mA) Collector current IC (A) 5 5. 5.40.5 .0 4 3.5 3.0 2.5 10 Collector to emitter voltage VCE (V) Fig.1 Maximum Collector Dissipation Curve 1.0 3 2SD669A 0.2 0 1 3 –2 25 5 50 (40 V, 0.5 A) 0.3 25 –25 0 (13.3 V, 1.5 A) 1.0 Ta = 75°C Collector power dissipation PC (W) 30 10 30 100 300 Collector current IC (mA) 1,000 Fig.6 Collector to Emitter Saturation Voltage vs. Collector Current 3/5 18-Oct-05 2SD669/2SD669A 240 IC = 10 IB Gain bandwidth product fT (MHz) Base to emitter ON voltage VBE( ON ) (V) 1.2 1.0 25°C TC = – 25 75 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 160 120 80 40 0 10 1,000 Fig.7 Base to Emitter ON Voltage vs. Collector Current Collector output capacitance Cob (pF) 200 VCE = 5 V Ta = 25°C 30 100 300 Collector current IC (mA) 1,000 Fig.8 Gain Bandwidth Product vs. Collector Current 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 10 2 5 20 50 100 Collector to base voltage VCB (V) Fig.9 Collector Output Capacitance vs. Collector to Base Voltage WEITRON http://www.weitron.com.tw 4/5 18-Oct-05 2SD669/2SD669A TO-126C Outline Dimensions unit:mm TO-126C Dim A A1 b b1 c D E e e1 L L1 P Φ1 Φ2 WEITRON http://www.weitron.com.tw 5/5 Min 3.000 1.800 0.660 1.170 0.450 7.800 10.800 4.460 15.100 1.300 4.040 2.700 3.100 2.280 TYP Max 3.400 2.200 0.860 1.370 0.600 8.200 11.200 4.660 15.500 1.500 4.240 2.900 3.300 18-Oct-05