KTD1302 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z Audio Muting Application z High Emitter-Base Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 12 V Collector cut-off current ICBO VCB=25V,IE=0 100 nA Emitter cut-off current IEBO VEB=12V,IC=0 100 nA DC current gain hFE(1) (FOR) VCE=2V, IC=4mA 200 hFE(2)(REV) VCE=2V, IC=4mA 20 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA Collector output capacitance Transition frequency Cob fT VCB=10V,IE=0, f=1MHz VCE=10V,IC=1mA, f=100MHz 800 0.25 V 1 V 10 pF 60 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５