2SC3650 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS 2. COLLECTOR 3. EMITTER LF Amplifiers, Various Drivers, Muting Circuit MARKING:CF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 15 V IC Collector Current 1.2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 15 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=10V,IC=0 0.1 µA hFE(1) VCE=5V, IC=500mA 800 hFE(2) VCE=5V, IC=10mA 600 DC current gain 3200 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=10mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=10mA 1.2 V fT VCE=10V,IC=50mA 220 MHz VCB=10V, IE=0, f=1MHz 17 pF Transition frequency Collector output capacitance Cob １ JinYu semiconductor www.htsemi.com