2SC2884 SOT-89-3L TRANSISTOR (NPN) FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 100 hFE(2) VCE=1V, IC=700mA 35 DC current gain Collector-emitter saturation voltage VCE(sat) 320 IC=500mA,IB=20mA 0.5 V V Base-emitter voltage VCE=1V, IC=10mA Transition frequency fT VCE=5V,IC=10mA 120 MHz VCB=10V, IE=0, f=1MHz 13 pF Cob Collector output capacitance CLASSIFICATION OF hFE(1) RANK O Y RANGE 100–200 160–320 MARKING PO1 PY1 １ JinYu semiconductor www.htsemi.com 0.5 0.8 VBE