2SC4373 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Small Flat Package z Large Current Capacity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE VCE=5V, IC=100mA VCE(sat) IC=500mA,IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IC=500mA 1 V Transition frequency fT VCE=5V,IC=500mA Collector-emitter saturation voltage Collector output capacitance Cob 80 120 VCB=10V, IE=0, f=1MHz RANK O Y RANGE 80–160 120–240 MARKING CO CY JinYu semiconductor www.htsemi.com MHz 30 CLASSIFICATION OF hFE １ 240 pF