2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z High Breakdown Voltage z Excellent DC Current Gain Linearity 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=2V, IC=100mA 90 hFE(2)* VCE=2V, IC=500mA 25 Collector-emitter saturation voltage VCE(sat)* IC=500mA,IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat)* IC=500mA,IB=50mA 1.5 V Base-emitter voltage VBE* VCE=10V, IC=10mA 0.7 V Transition frequency fT DC current gain Collector output capacitance Cob 400 0.6 VCE=5V,IC=10mA 160 MHz VCB=10V, IE=0, f=1MHz 12 pF *Pulse test CLASSIFICATION OF hFE（1） RANK W V U RANGE 90–180 135–270 200–400 MARKING BW BV BU １ JinYu semiconductor www.htsemi.com