2SA1 204 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES z Complementary to 2SC2884 z Small Flat Package z Audio Frequency Amplifier Application z High DC Current Gain 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-700mA 35 DC current gain VCE(sat) Collector-emitter saturation voltage 320 IC=-500mA,IB=-20mA -0.7 V V Base-emitter voltage VCE=-1V, IC=-10mA Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 19 pF VCE=-5V,IC= -10mA 120 MHz fT Transition frequency -0.5 -0.8 VBE CLASSIFICATION OF hFE(1) RANK O Y RANGE 100–200 160–320 MARKING RO RY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５