2SC4548 SOT-89-3L TRANSISTOR(NPN) 1. BASE FEATURES z Small Flat Package z High Breakdown Voltage z Excellent hFE Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 5 V Collector cut-off current ICBO VCB=300V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 µA DC current gain hFE VCE=10V, IC=50mA 60 200 Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=5mA 1 V Transition frequency Collector output capacitance fT Cob VCE=30V,IC=10mA 70 MHz VCB=30V, IE=0, f=1MHz 4 pF CLASSIFICATION OF hFE RANK D E RANGE 60–120 100–200 MARKING CN １ JinYu semiconductor www.htsemi.com