FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • • • • High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method FJP13007TU J13007 TO-220 3L (Dual Gauge) Rail FJP13007H1TU J13007-1 TO-220 3L (Single Gauge) Rail FJP13007H1TU_F080 J13007-1 TO-220 3L (Dual Gauge) Rail FJP13007H2TU J13007-2 TO-220 3L (Dual Gauge) Rail FJP13007H2TU_F080 J13007-2 TO-220 3L (Dual Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit V VCBO Collector-Base Voltage 700 VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current (DC) 4 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 Values are at TC = 25°C unless otherwise noted. Symbol Parameter BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 Emitter Cut-Off Current VEB = 9 V, IC = 0 IEBO Conditions Min. Typ. Max. 400 V 1 hFE1 DC Current Gain (1) VCE = 5 V, IC = 2 A 8 60 hFE2 DC Current Gain(1) VCE = 5 V, IC = 5 A 5 30 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage IC = 2 A, IB = 0.4 A 1.0 IC = 5 A, IB = 1 A 2.0 IC = 8 A, IB = 2 A 3.0 IC = 2 A, IB = 0.4 A 1.2 IC = 5 A, IB = 1 A 1.6 Current Gain Bandwidth Product VCE = 10 V, IC = 0.5 A Cob Output Capacitance VCB = 10 V, f = 0.1 MHz tON Turn-On Time tSTG Storage Time VCC = 125 V, IC = 5 A, IB1 = -IB2 = 1 A, RL = 25 Ω fT tF Fall Time Unit 4 mA V V MHz 110 pF 1.6 μs 3.0 μs 0.7 μs Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. hFE Classification Classification H1 H2 hFE1 15 ~ 28 26 ~ 39 © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com 2 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 IC = 3 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.1 10 1 Figure 1. DC Current Gain 1000 tR, tD [ns], TURN ON TIME Cob[pF], OUTPUT CAPACITANCE 100 Figure 2. Saturation Voltage 1000 100 10 tR 100 tD, VBE(off)=5V VCC=125V IC=5IB 1 0.1 1 10 100 10 0.1 1000 1 VCB[V], COLLECTOR-BASE VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn-On Time 100 10000 VCC=125V IC=5IB tSTG IC[A], COLLECTOR CURRENT tSTG, tF [ns], TURN OFF TIME 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 1000 100 tF 10μs 10 1ms DC 100μs 1 0.1 0.01 10 0.1 1 1 10 100 1000 Figure 6. Forward Biased Safe Operating Area Figure 5. Turn-Off Time © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 90 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 1 0.1 80 70 60 50 40 30 20 10 0.01 10 0 100 1000 0 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Figure 7. Reverse Biased Safe Operating Area © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 25 www.fairchildsemi.com 4 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) FJP13007 — High Voltage Fast-Switching NPN Power Transistor Physical Dimensions Figure 9. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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