TRIQUINT TGA4543

TGA4543
40.5 - 43.5 GHz Power Amplifier
Applications



Point to Point Radio
Millimeter-wave Communications
Military & Space
Product Features







Functional Block Diagram
Frequency range: 40.5 - 43.5 GHz
Output Power: 30 dBm Psat, 28.5 dBm P1dB
Gain: 23 dBm Typical
TOI: 38 dBm @ 18 dBm Output/Tone
Integrated Power Detector
Bias: Vcc = 6V, Icc = 900 mA Typical
Dimension: 2.95 x 2.95 x 0.1 mm
Vg Vd1
14 13
Vd2
Vd3
12
11
Vd4 Vref
10
9
8
Vdet
7
1
RF In
General Description
RF Out
2 3
4
5
6
Vg Vd1
Vd2
Vd3
Vd4
Bond Pad Configuration
The TriQuint TGA4543 is a 40.5 - 43.5 GHz Power
Amplifier designed using TriQuint’s power pHEMT
production process.
The TGA4543 typically provides 28.5 dBm of output
power at 1dB gain compression with small signal gain
of 23 dB. Third Order Intercept is 38 dBm at 18 dBm
Output/Tone.
Bond Pad #
Function Label
1
2, 14
3, 4, 5, 6, 10, 11, 12, 13
RF In
Vg
Vd
7
8
9
RF Out
Vdet
Vref
The TGA4543 is ideally suited for Point-to-Point
Radio, Ka-band communications, and Millimeter-wave
communications.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Ordering Information
Part No.
TGA4543
ECCN
3A001.b.2.e
Description
40.5 – 43.5 GHz Power
Amplifier
Standard order qty = 50 pieces.
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Drain to Gate Voltage, Vd - Vg
Drain Voltage, Vd
Gate Voltage, Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,
T=25°C
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
10V
+6.5 V
-4 to 0 V
2086 mA
-8.2 to 113 mA
13.6 W
Operating Temp. Range -40
Vd
Id
Id (Under RF Drive)
+25
6.0
900
1500
Vg
-0.7
Max Units
C
V
mA
mA
+85
V
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
26 dBm
200°C
320°C
-40 to 150C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 6 V, Id= 900mA, Vg = -0.7 V Typical.
Parameter
Conditions
Operational Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power
Output Power
Output TOI
Gain Temperature Coefficient
Power Temperature Coefficient
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
Min
Typ
Max
Units
43.5
23
8
GHz
dB
dB
10
30
28.5
38
-0.04
-0.023
dB
dBm
dBm
dBm
dB/°C
dB/°C
40.5
Saturation
1dB Gain Compression
18 dBm Output/Tone
1dB Gain Compression
- 2 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Specifications
Thermal and Reliability Information
Rating
Parameter
Condition
Thermal Resistance, θJC, measured to back of
package,
Small-Signal
Under RF Drive
Tbase = 70 °C
Channel Temperature (Tch), and Median Lifetime
(Tm)
Channel Temperature (Tch), and Median Lifetime
(Tm) Under RF Drive
Tbase = 70 °C, Vd = 6 V, Id = 900
mA, Pdiss = 5.4 W
Tbase = 70 °C, Vd = 6 V, Id = 1500
mA, Pout = 30.5 dBm, Pdiss = 7.9 W
θJC = 7.6 °C/W
θJC = 10.4 °C/W
Tch = 111 °C
Tm = 2.2E+7
Hours
Tch = 152 °C
Tm = 8.3 E+5
Hours
Note: Thermal model includes 38um AuSn bondline and 500um CuMo thermal spreader
Median Lifetime (Tm) vs. Channel Temperature (Tch)
Median Lifetime, Tm (Hours)
1.E+15
1.E+14
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
FET5
1.E+04
25
50
75
100
125
150
175
200
Channel Temperature, Tch (°C)
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 3 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 4 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
-2
-6
-8
-10
-12
Gain
-16
IRL
-18
ORL
-20
40.5
41.5 42 42.5
Frequency (GHz)
43
43.5
44
0
-5
-10
-15
-20
-25
-30
Gain
-35
IRL
-40
ORL
-45
-50
30
32.5
35
37.5 40 42.5
Frequency (GHz)
45
47.5
Pout, Gain, Id vs. Pin @ 42 GHz
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
Output Power (dBm), Gain (dB)
Output Power vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
32
31
30
29
28
27
26
25
24
23
22
Psat
P1dB
50
35
3000
Pout
30
Gain
2500
Id
25
20
2000
15
1500
10
1000
5
0
40
-25
-28
-31
-34
-37
-40
-43
-46
-49
-52
-55
-58
41
40.5
41
41.5
42
42.5
Frequency (GHz)
43
43.5
44
500
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power (dBm)
IM3 vs. Pout/Tone vs. Frequency
TOI vs. Pout/Tone vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
40.5 GHz
Output TOI (dBm)
Output Power (dBm)
-14
Gain (dB)
-4
31
29
27
25
23
21
19
17
15
13
11
9
7
5
42.0 GHz
43.5 GHz
40
39
38
37
36
35
34
33
32
31
30
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Pout/Tone (dBm)
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
Return Loss (dB)
0
40
IM3 (dBc)
S-Parameters vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
Current (mA)
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
S-Parameters vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
Return Loss (dB)
Gain (dB)
Typical Performance
- 5 of 12 -
Pout/Tone = 16 dBm
Pout/Tone = 18 dBm
Pout/Tone = 20 dBm
40
40.5
41
41.5
42
42.5
Frequency (GHz)
43
43.5
44
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
P1dB vs. Frequency vs. Id
Gain vs. Frequency vs. Id
Vd = 5 - 6 V, Id = 900 - 1100 mA, 25°C
Vd = 5 - 6 V, Id = 900 - 1100 mA, 25°C
30
29
28
27
26
25
24
23
22
21
20
Gain (dB)
P1dB (dBm)
Typical Performance
5V900mA
5V1100mA
6V900mA
6V1100mA
40
40.5
41
41.5
42
42.5
Frequency (GHz)
43
43.5
25
24
23
22
21
20
19
18
17
16
15
44
5V900mA
5V1100mA
6V900mA
6V1100mA
40
TOI vs. Frequency vs. Id
38
37
Gain (dB)
OTOI @ 18 dBm Pout/Tone (dBm)
39
36
5V@900mA
5V@1100mA
6V@900mA
33
6V@1100mA
32
31
30
40
40.5
41
41.5
42
42.5
Frequency (GHz)
43
43.5
26
25
24
23
22
21
20
19
18
17
16
OTOI @ 18 dBm Pout/Tone (dBm)
P1dB (dBm)
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
43
41
41.5
42
42.5
Frequency (GHz)
43
43.5
44
43.5
44
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical
-40°C
41.5
42
42.5
Frequency (GHz)
40.5
TOI vs. Frequency vs. Temperature
+25°C
41
44
+85°C
40
44
+85°C
40.5
43.5
+25°C
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical
40
43
-40°C
P1dB vs. Frequency vs. Temperature
32
31
30
29
28
27
26
25
24
23
22
21
20
41.5
42
42.5
Frequency (GHz)
Vd = +6.0V, Id = 900 mA, Vg = -0.7 Typical
40
34
41
Gain vs. Frequency vs. Temperature
Vd = 5 - 6 V, Id = 900 - 1100 mA, 25°C
35
40.5
43.5
40
39
38
37
36
35
34
33
32
31
30
44
- 6 of 12 -
+85°C
+25°C
-40°C
40
40.5
41
41.5
42
42.5
Frequency (GHz)
43
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Typical Performance
Power Detector vs. Pout vs. Frequency
Output Power vs. Frequency
Vd = +6V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
Vd = +6V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
10
40.5 GHz
Output Power (dBm)
42 GHz
43.5 GHz
Vdiff (V)
1
0.1
0.01
0
2
4
6
33
32
31
30
29
28
27
26
25
24
23
8 10 12 14 16 18 20 22 24 26 28 30 32
Output Power (dBm)
Psat
P1dB
32
33
34
35
36
37 38 39 40
Frequency (GHz)
41
42
43
44
TOI vs. Pout/Tone vs. Frequency
OTOI (dBm)
Vd = +6.0V, Id = 900 mA, Vg = -0.7 V Typical, 25°C
40
39
38
37
36
35
34
33
32
31
30
Pout/Tone = 16 dBm
Pout/Tone = 18 dBm
Pout/Tone = 20 dBm
32
33
34
35
36
37 38 39 40
Frequency (GHz)
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
41
42
43
44
- 7 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Bond Pad Description
14
13
11
12
10
9
8
1
7
2
Bond Pad
3
5
4
6
Symbol
Description
RF In
RF Out
Input, matched to 50 ohms
Gate voltage. ESD protection included; Bias network is required;
see Application Circuit on page 7 as an example.
Drain voltage. Bias network is required; must be biased from both
sides; see Application Circuit on page 7 as an example.
Output, matched to 50 ohms.
8
Vdet
Detector diode output voltage. Varies with RF output power.
9
Vref
Reference diode output voltage.
1
2, 14
3, 4, 5, 6, 10, 11,
12, 13
7
Vg
Vd
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 8 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Application Circuit
C11
0.01 uF
C15
1 uF
C6
100 pF
C12
0.01 uF
Id = 900 mA
R3
10 Ohm
C4
100 pF
C10
0.01 uF
Vg
-0.7 V Typical
C5
100 pF
Vref
R1
10 Ohm
14 13
12
11
10
C13
1 uF
9
R5
40k Ohm
6V
Vdiff
8
R4
Vdet
7
1
RF In
RF Out
2 3
C1
100 pF
40k Ohm
4
6
5
C7
0.01 uF
C2
100 pF
C3
100 pF
C8
0.01 uF
C9
0.01 uF
R2
10 Ohm
C14
1 uF
Vd must be biased from both sides. Vg can be biased from either side.
Bias-up Procedure
Bias-down Procedure
Vg set to -1.5 V
Vd set to +6 V
Adjust Vg more positive until quiescent Id is 900 mA.
This will be ~ Vg = -0.7 V
Apply RF signal to RF Input
Turn off RF supply
Reduce Vg to -1.5V. Ensure Id ~ 0 mA
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
Turn Vd to 0 V
Turn Vg to 0 V
- 9 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Application Circuit
Vg = -0.7 V
Typical
C13
1 uF
Vg
R1
10 Ohm
C16
1 uF
C17
1 uF
R4
10 Ohm
R5
10 Ohm
Vd12
C10
0.01 uF
Vd34
C11
0.01 uF
C4
100 pF
C12
0.01 uF
C5
100 pF
C6
100 pF
RF In
Vd = 6 V,
Id = 900 mA
RF Out
C1
100 pF
C7
0.01 uF
Vg
C2
100 pF
C3
100 pF
C8
0.01 uF
C9
0.01 uF
Vd12
Vd34
R2
10 Ohm
C14
1 uF
R3
10 Ohm
C15
1 uF
Bill of Material
Ref Des
Value
Description
Manufacturer Part Number
C1, C2, C3, C4, C5, C6
100 pF
Cap, 50V, 10%, Single Layer Cap various
C7, C8, C9, C10, C11, C12
0.01 µF
Cap, 50V, 10%, SMD
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 10 of 12 -
various
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Mechanical Information
14
13
11
12
10
9
8
1
7
2
3
5
4
6
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad
1
2, 14
3, 4, 5, 11, 12, 13
6, 10
7
8
9
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
Symbol
RF In
Vg
Vd
Vd
RF Out
Vdet
Vref
- 11 of 12 -
Pad Size
0.190 x 0.090
0.090 x 0.090
0.093 x 0.090
0.093 x 0.190
0.190 x 0.090
0.090 x 0.090
0.090 x 0.090
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Product Compliance Information
ESD Information
Solderability
Compatible with both lead-free (260 °C max.
reflow temp.) and tin/lead (245 °C max. reflow
temp.) soldering processes.
ESD Rating:
Value:
Test:
Standard:
Class 0
Passes 150V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and
Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes,
maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 12 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TGA4543
40.5 - 43.5 GHz Power Amplifier
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information
contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the
entire risk associated with such information is entirely with the user. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for
TriQuint products. The information contained herein or any use of such information does not grant, explicitly or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to
such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 13 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®