TGC2510-SM Ku-Band Upconverter Applications • • • 2510 VSAT Point-to-Point Radio Test Equipment & Sensors 1249 5343 28-pin 5x5mm QFN package Product Features • • • • • • • • Functional Block Diagram RF Frequency Range: 10 - 16 GHz IF Frequency: DC – 3.5 GHz LO Frequency: 6.5 – 19 GHz LO Input Power: 0 to 6 dBm Conversion Gain: 17 dB OTOI: 33 dBm at max gain Attenuation Range: 15 dB typical Package Dimensions: 5.0 x 5.0 x 1.3 mm General Description The TriQuint TGC2510-SM is a Ku-Band image reject up-converter with integrated LO buffer amplifier and output variable gain amplifier. The TGC2510-SM operates from an RF of 10 to 16 GHz and LO from 6.5 to 19 GHz with IF inputs from DC to 3.5GHz and is designed using TriQuint’s pHEMT production process. Pin Configuration Pin # Function Label 1, 7, 8, 9, 13, 14, 15, 16, 21, 22, 26, 28 2 3, 11, 18, 19, 20 4 5 6 10 12 17 23 24 25 27 The TGC2510-SM typically provides 33 dBm of output TOI at –10 dBm input power per tone and has a conversion gain of 17 dB. The TGC2510-SM is available in a low-cost, surface mount 28 lead 5x5mm QFN package and is ideally suited for Point-to-Point Radio, and Ku-Band VSAT Ground Terminal. GND RF OUT NC VCTRL VREF VGRF IF1 IF2 LO IN VGLO VDLO VGX VDRF Lead-free and RoHS compliant. Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description TGC2510-SM EAR99 Ku-band Upconverter Standard T/R size = 500 pieces on a 13” reel. Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ VDRF VDLO IDRF IDLO VREF VGRF, VGLO, VGX 6V 6V 350 mA 100 mA 3V -2 to +1.5 V Operating Temp. Range -40 VDRF IDRF VGRF +25 5 240 -0.70 VDLO IDLO VGLO VREF VGX VCTRL 5 60 -0.63 2 -1.2 0 VCTRL IF1, IF2 RF Input Power, 50Ω, T = 25°C Channel Temperature, Tch Storage Temperature 3V -2 to +2 V 10 dBm 200 °C -65 to 125°C LO Input Power 0 Max Units +85 °C V mA V V mA V V V V 6 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: IF Input Power = -10 dBm, VGX = -1.2 V, VREF = 2 V, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VCTRL = 0 V, for maximum gain. Parameter Conditions RF Frequency Range LO Frequency Range IF Frequency Range LO Input Power Conversion Gain OIP3 © 2012 TriQuint Semiconductor, Inc. Typ Max Units 16 19 3.5 6 17 33 GHz GHz GHz dBm dBm dBm 20 dB 10 6.5 DC 0 IMR Preliminary Data Sheet: Rev B 10/11/12 Min - 2 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Specifications Thermal and Reliability Information Parameter Condition Thermal Resistance, θJC, measured to back of package Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 3 of 22 - Tbase = 85 °C Tbase = 85 °C, VDRF = 5 V, IDRF = 240 mA VDLO = 5 V, IDLO = 60 mA Pdiss = 1.5 W Tbase = 85 °C VDRF = 5 V, IDRF = 240 mA VDLO = 5 V, IDLO = 85 mA Pin = -10 dBm Pdiss = 1.63 W Rating θJC = 26.1 °C/W Tch = 124 °C Tm = 2.3 E+7 Hours Tch = 128 °C Tm = 1.4 E+7 Hours Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied. Conversion Gain vs. RF vs. IF Conversion Gain vs. RF vs. IF Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C 25 Conversion Gain (dB) Conversion Gain (dB) 25 20 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 0 20 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 0 10 11 12 13 14 RF Frequency (GHz) 15 16 10 15 16 Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C 25 Conversion Gain (dB) 25 Conversion Gain (dB) 12 13 14 RF Frequency (GHz) Conversion Gain vs. RF vs. IF Conversion Gain vs. RF vs. IF 20 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 20 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 0 0 10 11 12 13 14 RF Frequency (GHz) 15 10 16 Conversion Gain vs. RF vs. IF 11 12 13 14 RF Frequency (GHz) 15 16 Conversion Gain vs. RF vs. IF Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C 5 5 Conversion Gain (dB) Conversion Gain (dB) 11 0 -5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz -10 -15 -20 0 -5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz -10 -15 -20 10 11 12 13 14 RF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 16 10 - 4 of 22 - 11 12 13 14 RF Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied. Conversion Gain vs. RF vs. IF Conversion Gain vs. RF vs. IF Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C 5 Conversion Gain (dB) Conversion Gain (dB) 5 0 -5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz -10 -15 -20 0 -5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz -10 -15 -20 10 11 12 13 14 RF Frequency (GHz) 15 16 10 15 16 Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C 50 Image Rejection Ratio (dB) 50 Image Rejection Ratio (dB) 12 13 14 RF Frequency (GHz) IMR vs. RF Output and IF Input IMR vs. RF Output and IF Input 40 30 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 0 10 11 12 13 14 RF Frequency (GHz) 40 30 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 0 15 10 16 IMR vs. RF Output and IF Input 11 12 13 14 RF Frequency (GHz) 15 16 IMR vs. RF Output and IF Input Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C 50 Image Rejection Ratio (dB) 50 Image Rejection Ratio (dB) 11 40 30 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 0 10 11 12 13 14 RF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 40 30 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 0 15 16 10 - 5 of 22 - 11 12 13 14 RF Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied. IMR vs. RF Output and IF Input IMR vs. RF Output and IF Input Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C 50 Image Rejection Ratio (dB) Image Rejection Ratio (dB) 50 40 30 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 0 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 40 30 20 10 0 10 11 12 13 14 RF Frequency (GHz) 15 16 10 15 16 Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C 50 Image Rejection Ratio (dB) 50 Image Rejection Ratio (dB) 12 13 14 RF Frequency (GHz) IMR vs. RF Output and IF Input IMR vs. RF Output and IF Input 40 30 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 0 10 11 12 13 14 RF Frequency (GHz) 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 40 30 20 10 0 15 10 16 11 12 13 14 RF Frequency (GHz) 15 16 Conversion Gain vs. IF vs. RF Conversion Gain vs. IF vs. RF Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C 25 Conversion Gain (dB) 25 Conversion Gain (dB) 11 20 15 10 GHz 13 GHz 16 GHz 10 5 20 15 10 GHz 13 GHz 16 GHz 10 5 0 0 0 0.5 1 1.5 2 2.5 3 IF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 3.5 0 4 - 6 of 22 - 0.5 1 1.5 2 2.5 3 IF Frequency (GHz) 3.5 4 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied Conversion Gain vs. IF vs. RF Conversion Gain vs. IF vs. RF Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C 25 Conversion Gain (dB) Conversion Gain (dB) 25 20 15 10 GHz 13 GHz 16 GHz 10 5 0 20 15 10 GHz 13 GHz 16 GHz 10 5 0 0 0.5 1 1.5 2 2.5 3 IF Frequency (GHz) 3.5 4 0 40 35 35 30 30 OIP3 (dBm) OIP3 (dBm) 40 25 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 3.5 4 25 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 20 15 10 5 5 0 0 10 11 12 13 14 RF Frequency (GHz) 15 10 16 OIP3 vs. RF Output and IF Input 35 35 30 30 OIP3 (dBm) 40 25 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 15 10 12 13 14 RF Frequency (GHz) 15 16 Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C 40 20 11 OIP3 vs. RF Output and IF Input Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C OIP3 (dBm) 1.5 2 2.5 3 IF Frequency (GHz) Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C 15 1 OIP3 vs. RF Output and IF Input OIP3 vs. RF Output and IF Input 20 0.5 25 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 20 15 10 5 5 0 0 10 11 12 13 14 RF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 16 10 - 7 of 22 - 11 12 13 14 RF Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied. OIP3 vs. RF Output and IF Input OIP3 vs. RF Output and IF Input Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C 40 40 35 35 30 30 OIP3 (dBm) OIP3 (dBm) Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C 25 20 15 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 5 0 10 11 12 13 14 RF Frequency (GHz) 15 25 20 15 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 5 0 16 10 40 40 35 35 35 30 30 30 25 25 OIP3(dBm) (dBm) OIP3 OIP3 (dBm) 40 25 20 20 15 15 20 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 10 10 5 5 0 0 10 10 0 10 11 12 13 14 RF Frequency (GHz) 15 16 1.0 GHz 1.0 GHz 2.0 GHz 2.0 GHz 3.0 GHz 3.0 GHz 3.5 GHz 3.5 GHz 11 11 Vcontrol = 0 V, LSB, 25 °C 12 13 14 12 13 14 RF Frequency (GHz) RF Frequency (GHz) 15 15 16 16 Vcontrol = 0 V, USB, 25 °C 50 50 40 40 Isolation (dB) Isolation (dB) 16 L-I Isolation vs. LO Frequency L-I Isolation vs. LO Frequency 30 LO = 0 dBm LO = 6 dBm 20 15 Vcontrol == 6 dBm, USB, 2525 °C°C Vcontrol= =2 2V,V,LO LO 6 dBm, USB, Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C 10 12 13 14 RF Frequency (GHz) OIP3 OIP3vs. vs.RF RFOutput Outputand andIFIFInput Input OIP3 vs. RF Output and IF Input 15 11 30 LO = 0 dBm LO = 6 dBm 20 10 10 0 0 10 11 12 13 14 LO Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 10 16 - 8 of 22 - 11 12 13 14 LO Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied. L-I Isolation vs. LO Frequency L-I Isolation vs. LO Frequency Vcontrol = 2 V, USB, 25 °C 50 50 40 40 Isolation (dB) Isolation (dB) Vcontrol = 2 V, LSB, 25 °C 30 LO = 0 dBm LO = 6 dBm 20 10 30 LO = 0 dBm LO = 6 dBm 20 10 0 0 10 11 12 13 14 LO Frequency (GHz) 15 16 10 L-R Isolation vs. LO Frequency 11 16 Vcontrol = 0 V, USB, 25 °C 50 50 40 40 LO = 0 dBm LO = 6 dBm 30 Isolation (dBm) Isolation (dB) 15 L-R Isolation vs. LO Frequency Vcontrol = 0 V, LSB, 25 °C 20 10 LO = 0 dBm LO = 6 dBm 30 20 10 0 0 10 11 12 13 14 LO Frequency (GHz) 15 16 10 11 50 40 40 Isolation (dB) 50 LO = 0 dBm LO = 6 dBm 20 15 16 Vcontrol = 2 V, USB, 25 °C Vcontrol = 2 V, LSB, 25 °C 30 12 13 14 LO Frequency (GHz) L-R Isolation vs. LO Frequency L-R Isolation vs. LO Frequency Isolation (dB) 12 13 14 LO Frequency (GHz) LO = 0 dBm LO = 6 dBm 30 20 10 10 0 0 10 11 12 13 14 LO Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 10 16 - 9 of 22 - 11 12 13 14 LO Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance I to R Isolation vs. LO vs. IF I to R Isolation vs. LO vs. IF Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C 80 80 70 70 60 60 Isolation (dB) Isolation (dB) IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied 50 40 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 20 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 10 0 10 11 12 13 14 LO Frequency (GHz) 15 16 10 11 12 13 14 LO Frequency (GHz) 15 I to R Isolation vs. LO vs. IF I to R Isolation vs. LO vs. IF Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C 80 80 70 70 60 60 Isolation (dB) Isolation (dB) 40 20 0 50 40 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 20 10 16 50 40 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 20 10 0 0 10 11 12 13 14 LO Frequency (GHz) 15 16 10 11 12 13 14 LO Frequency (GHz) 15 I to R Isolation vs. LO vs. IF I to R Isolation vs. LO vs. IF Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C 80 80 70 70 60 60 Isolation (dB) Isolation (dB) 50 50 40 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 20 10 16 50 40 30 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 20 10 0 0 10 11 12 13 14 LO Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 10 16 - 10 of 22 - 11 12 13 14 LO Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance I to R Isolation vs. LO vs. IF I to R Isolation vs. LO vs. IF Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C 80 80 70 70 60 60 Isolation (dB) Isolation (dB) IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied 50 40 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 20 10 50 40 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 30 20 10 0 0 10 11 12 13 14 LO Frequency (GHz) 15 16 10 Input 1dB Compression (dBm) Input 1dB Compression (dBm) 15 10 5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 10 11 12 13 14 RF Frequency (GHz) 15 16 15 10 5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 0 -5 10 16 11 12 13 14 RF Frequency (GHz) 15 16 Input Input 1dB 1dB Compression Compression vs. vs. RF RF Output Output Input 1dB Compression vs. RF Output Vcontrol Vcontrol==00V, V,LO LO==66dBm, dBm,USB, USB,25 25°C °C Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C 15 15 15 Input (dBm) Input 1dB 1dB Compression Compression (dBm) Input 1dB Compression (dBm) 15 Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C -5 12 13 14 LO Frequency (GHz) Input 1dB Compression vs. RF Output Input 1dB Compression vs. RF Output 0 11 10 10 10 5 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 0 -5 10 11 12 13 14 RF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 55 1.0GHz GHz 1.0 2.0GHz GHz 2.0 3.0GHz GHz 3.0 3.5GHz GHz 3.5 00 -5 -5 10 10 16 - 11 of 22 - 11 11 12 13 14 12 13 14 RFFrequency Frequency(GHz) (GHz) RF 15 15 16 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied. Input 1dB Compression vs. RF Output Input 1dB Compression vs. RF Output Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C 15 Input 1dB Compression (dBm) Input 1dB Compression (dBm) Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 0 -5 10 11 12 13 14 RF Frequency (GHz) 15 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 0 -5 10 16 Input 1dB Compression (dBm) Input 1dB Compression (dBm) 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz -5 10 11 12 13 14 RF Frequency (GHz) 15 10 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 5 0 -5 10 16 12 13 14 LO Frequency (GHz) © 2012 TriQuint Semiconductor, Inc. Voltage (V) Voltage (V) Preliminary Data Sheet: Rev B 10/11/12 15 12 13 14 RF Frequency (GHz) 15 16 LO at 3 dBm, IF = 3.5 GHz, USB, 25 °C VDI_Min Gain VDI_Max Gain VDQ_Min Gain VDQ_Max gain 11 11 Nulling Voltages vs. LO Frequency LO at 3 dBm, IF = 2.5 GHz, USB, 25 °C 10 16 15 Nulling Voltages vs. LO Frequency 1 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 15 Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C 0 12 13 14 RF Frequency (GHz) Input 1dB Compression vs. RF Output Input 1dB Compression vs. RF Output 5 11 1 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VDI_Min Gain VDI_Max Gain VDQ_Min Gain VDQ_Max gain 10 16 - 12 of 22 - 11 12 13 14 LO Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V Data taken with external IF hybrid and LO nulling applied. Conversion Gain vs. RF vs. Temperature Conversion Gain vs. RF vs. Temperature Vcontrol = 0 V, LO = 0 dBm, USB Vcontrol = 0 V, LO = 0 dBm, LSB 25 25 IF @ 2.0 GHz Conversion Gain (dB) Conversion Gain (dB) IF = 2.0 GHz 20 15 10 85 °C 25 °C -40 °C 5 0 20 15 85 °C 25 °C -40 °C 10 5 0 10 11 12 13 14 RF Frequency (GHz) 15 16 10 Conversion Gain vs. RF vs. Temperature 11 25 IF @ 3.5 GHz Conversion Gain (dB) IF = 3.5 GHz Conversion Gain (dB) 16 Vcontrol = 0 V, LO = 0 dBm, USB 25 20 15 10 85 °C 25 °C -40 °C 0 20 15 10 85 °C 25 °C -40 °C 5 0 10 11 12 13 14 RF Frequency (GHz) 15 16 10 OIP3 vs. RF Output vs. Temperature 11 50 12 13 14 RF Frequency (GHz) 15 16 OIP3 vs. RF Output vs. Temperature Vcontrol = 0 V, LO = 6 dBm, LSB Vcontrol = 0 V, LO = 6 dBm, USB 50 IF = 2.0 GHz 40 IF @ 2.0 GHz 40 30 OIP3 (dBm) OIP3 (dBm) 15 Conversion Gain vs. RF vs. Temperature Vcontrol = 0 V, LO = 0 dBm, LSB 5 12 13 14 RF Frequency (GHz) 85 °C 25 °C -40 °C 20 10 30 85 °C 25 °C -40 °C 20 10 0 0 10 11 12 13 14 RF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 16 10 - 13 of 22 - 11 12 13 14 RF Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied OIP3 vs. RF Output vs. Temperature OIP3 vs. RF Output vs. Temperature Vcontrol = 0 V, LO = 6 dBm, LSB 50 Vcontrol = 0 V, LO = 6 dBm, USB 50 IF = 3.5 GHz 40 OIP3 (dBm) OIP3 (dBm) 40 IF @ 3.5 GHz 30 85 °C 25 °C -40 °C 20 10 30 85 °C 25 °C -40 °C 20 10 0 0 10 11 12 13 14 RF Frequency (GHz) 15 16 10 IMR vs. RF Output vs. Temperature 11 16 Vcontrol = 0 V, LO = 0 dBm, USB 50 50 IF = 2.0 GHz Image Rejection Ratio (dB) Image Rejection Ratio (dB) 15 IMR vs. RF Output vs. Temperature Vcontrol = 0 V, LO = 0 dBm, LSB 40 30 20 85 °C 25 °C -40 °C 10 0 IF @ 2.0 GHz 40 30 20 85 °C 25 °C -40 °C 10 0 10 11 12 13 14 RF Frequency (GHz) 15 16 10 IMR vs. RF Output vs. Temperature 11 12 13 14 RF Frequency (GHz) 15 16 IMR vs. RF Output vs. Temperature Vcontrol = 0 V, LO = 0 dBm, LSB Vcontrol = 0 V, LO = 0 dBm, USB 50 50 IF = 3.5 GHz Image Rejection Ratio (dB) Image Rejection Ratio (dB) 12 13 14 RF Frequency (GHz) 40 30 20 85 °C 25 °C -40 °C 10 0 IF @ 3.5 GHz 40 30 20 85 °C 25 °C -40 °C 10 0 10 11 12 13 14 RF Frequency (GHz) Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. 15 16 10 - 14 of 22 - 11 12 13 14 RF Frequency (GHz) 15 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Typical Performance IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V. Data taken with external IF hybrid and LO nulling applied M x N Spurious Outputs for LSB LO = 0 – 6 dBm, 25 °C; All values are in dBc. For LSB IF = 2.0 GHz: LO = 12.0 GHz to 18.0 GHz; IF = 3.5 GHz: LO = 13.5 GHz to 19.0 GHz. Spurious Suppresion (dBc) for IF = 2.0 GHz Spurious Suppresion (dBc) for IF = 3.5 GHz RF/LO 0 1 2 3 RF/LO 0 1 2 3 -3 --- 70 79 76 -3 --- 84 75 73 -2 --- 44 40 75 -2 --- 50 45 71 -1 --- 0 38 69 -1 --- 0 59 63 0 --- 24 30 38 0 --- 21 28 34 1 61 24 69 68 1 51 27 64 69 2 62 44 79 75 2 49 64 74 74 3 72 78 78 76 3 85 77 70 --- M x N Spurious Outputs for USB LO = 0 – 6 dBm, 25 °C; All values are in dBc. For USB IF = 2.0 GHz: LO = 8.0 GHz to 14.0 GHz; IF = 3.5 GHz: LO = 6.5 GHz to 12.5 GHz. Spurious Suppresion (dBc) for IF = 2.0 GHz Spurious Suppresion (dBc) for IF = 3.5 GHz RF/LO 0 1 2 3 RF/LO 0 1 2 3 -3 --- 70 46 44 -3 --- 62 66 49 -2 --- 46 29 54 -2 --- 70 33 41 -1 --- 17 20 15 -1 --- 23 8 14 0 --- 23 -17 25 0 --- 19 -29 -17 1 56 0 8 26 1 23 0 4 11 2 28 33 32 62 2 27 30 38 41 3 48 43 66 71 3 56 58 64 72 Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 15 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Pin Description TOP VIEW Pin 1, 7, 8, 9, 13, 14, 15, 16, 21, 22, 26, 28 2 3, 11, 18, 19, 20 Symbol Description GND Internal Grounding; must be grounded on PCB. RF OUT NC RF Output matched to 50 ohms, AC Coupled. No internal connection; must be grounded on PCB. Control Voltage. Bias network is required; see Application Circuit on page 17 as an example. Reference Voltage. Bias network is required; see Application Circuit on page 17 as an example. RF Gate Voltage. Bias network is required; see Application Circuit on page 17 as an example. IF Input matched to 50 ohms, DC coupled. IF Input matched to 50 ohms, DC coupled. LO Input, matched to 50 ohms, AC coupled. LO Gate Voltage. Bias network is required; see Application Circuit on page 17 as an example. LO Drain Voltage. Bias network is required; see Application Circuit on page 17 as an example. Mixer Voltage. Bias network is required; see Application Circuit on page 17 as an example. RF Drain Voltage. Bias network is required; see Application Circuit on page 17 as an example. Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 20 for suggested footprint. 4 VCTRL 5 VREF 6 VGRF 10 12 17 IF1 IF2 LO IN 23 VGLO 24 VDLO 25 VGX 27 VDRF 29 GND Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 16 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Application Circuit VDRF VDLO VGLO VGX 2510 YYWW XXXX RF Output VCTRL VREF VGRF LO Input VDQ VDI LSB IF Input USB IF Input Biasing Procedures Bias up Bias Down Set VGX to -1.2 V Set VREF to 2.0 V Set VCTRL to 0 V Set VGLO to -1.5 V Set VDLO to 5.0 V Increase VGLO to get IDLO = 60 mA Set VGRF to -1.5 V Set VDRF to 5.0 V Increase VGRF to get IDRF = 240 mA Set VDI, VDQ to 0 V; or no connection Apply RF signal Turn off RF signal Reduce VDLO to 0 V Reduce VDRF to 0 V Set VDI to 0 V, if used for LO nulling Set VDQ to 0 V, if used for LO nulling Reduce VGLO to 0 V Reduce VGRF to 0 V Reduce VREF to 0 V Reduce VCTRL to 0 V Reduce VGX to 0 V Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 17 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Application Circuit PC Board Layout Board material is RO4003 0.008” thickness with ½ oz copper cladding. For further technical information, refer to the TGC2510-SM Product Information page. C15 C14 C16 C4 C10 C5 C3 C6 C12 U1 C8 C7 C11 C9 C17 C13 L1 L2 LSB Configuration L4 L3 C1 C2 X1 X1 R2 R2 X1 X1 R1 R1 Bill of Material Ref Des Value Description Manufacturer C1 – C2 10 pF Cap, 0402, 50V, 5%, NPO various C3 – C9 100 pF Cap, 0402, 50V, 5%, NPO various C10 – C13 0.01 µF Cap, 0805, 25V, 5%, COG C14 – C17 L1 – L4 1 µF 27 nH R1 0Ω R2 50 Ω Part Number various Cap, 0805, 25V, 5%, X5R various Ind, 0201, 100 mA, 5%, SMD various Res, 0402, 0.01W, SMD various Res, 0402, 0.05W, 0.1%, SMD various X1 Power Splitter Mini-Circuits QCN-25+ or QCN45+ U1 Ku-Band Up-Converter TriQuint TGC2510-SM Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 18 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Mechanical Information Package Information and Dimensions All dimensions are in millimeters. The TGC2510-SM will be marked with the “2510” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an auto-generated number. This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is NiPdAu. It is compatible with lead-free (maximum 260 °C reflow temperature) soldering processes. Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 19 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Mechanical Information PCB Mounting Pattern All dimensions are in millimeters. Notes: 1. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm diameter drill and have a final plated thru diameter of .25 mm. Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section. Standard T/R size = 500 pieces on a 13” reel. MATERIAL Vendor Advantek Vendor P/N BCC5X5-B DISTANCE BETWEEN CENTERLINE (mm) CAVITY (mm) CARRIER TAPE (mm) COVER TAPE (mm) Length (A0) Width (B0) Depth (K0) Pitch (P1) Length direction (P2) Width Direction (F) Width (W) Width (W) 5.25 5.25 1.8 8.0 2.00 5.50 12.0 9.20 Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 20 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC2510-SM Ku-Band Upconverter Product Compliance Information ESD Information Solderability Compatible with lead-free soldering processes, 260 °C maximum reflow temperature. temp Package lead plating: NiPdAu ESD Rating: Value: Test: Standard: TBD Passes ≥ TBD V min. Human Body Model (HBM) JEDEC Standard JESD22 JESD22-A114 The use of no-clean clean solder to avoid washing after soldering is recommended. This package is not compatible with solder containing lead. RoHS Compliance MSL Rating Moisture Sensitivity Level (MSL) TBD at 260°C convection reflow per JEDEC standard IPC/JEDEC JJ-STD-020. This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free Recommended Soldering Temperature Profile Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 21 of 22 - Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TGC2510-SM Ku-Band Upconverter Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev B 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 22 of 22 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ®