TGA2533 Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-Band VSAT Product Features • • • • • • • • • Functional Block Diagram Frequency Range: 12.7 – 15.4 GHz TOI: 43dBm Power: 35 dBm Psat, 34 dBm P1dB Gain: 28 dB Return Loss: 15 dB NF: 6 dB Integrated Power Detector Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical Dimensions: 3.2 x 3.0 x 0.1 mm Vg1 Vg2 Vg3 16 15 14 8 1 RF Out RF In TGA2533 2 3 4 Vg1 Vg2 Vg3 General Description Vd1 Vd2 Vd3 Vdet Vref 13 12 11 10 9 5 6 7 Vd1 Vd2 Vd3 Bond Pad Configuration The TriQuint TGA2533 is a Ku-Band Power Amplifier. The TGA2533 operates from 12.7 to 15.4 GHz and is designed using TriQuint’s power pHEMT production process. Bond Pad # Symbol 1 2, 16 3, 15 4, 14 5,13 6,12 7,11 8 9 10 RF In Vg1 Vg2 Vg3 Vd1 Vd2 Vd3 RF Out Vref Vdet The TGA2533 typically provides 43dBm of TOI at 20dBm Pout/Tone, 34 dBm of output power at 1 dB gain compression, and small signal gain is 28 dB. The TGA2533 is ideally suited for Point-to-Point Radio and Ku-Band VSAT Ground Terminal. Lead-free and RoHS compliant Ordering Information Part No. TGA2533 ECCN 3A001.b.2.c Description Ku-band Power Amplifier Standard order qty = 50 pieces. Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. - 1 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +8 V -3 to 0 V 2.24 A -11 to 90 mA 17.9 W 27 dBm 200 oC 260 oC -40 to 150 oC Vd Id Id_drive (Under RF Drive) Vg Min Typical Max Units 6 1.3 V A 1.7 A -0.55 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical. Parameter Min Operational Frequency Range Gain Input Return Loss Output Return Loss Output Power @ Saturation Output Power @ 1 dB Gain Compression Output TOI @ Pout/Tone = 20 dBm Gain Temperature Coefficient Power Temperature Coefficient 12.7 24 10 10 Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. 32 40 - 2 of 11 - Typical 28 15 15 35 34 43 -0.033 -0.005 Max Units 15.4 GHz dB dB dB dBm dBm dBm dB/°C dBm/°C Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of package Tbase = 70 °C Tbase = 70 °C, Vd = 6 V, Id = 1.3 A, Pdiss = 7.8 W Tbase = 70 °C, Vd = 6 V, Id = 1.7 A, Pout = 34.5 dBm, Pdiss = 7.38 W θJC = 5.76 °C/W Tch = 115 °C Tm = 2.5 E+7 Hours Tch = 113 °C Tm = 3.1 E+7 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm, (Hours) 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch, (°C) Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. - 3 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier -20 -15 -10 -5 0 5 10 15 20 25 30 Gain IRL ORL 12 12.5 13 13.5 14 14.5 15 15.5 30 28 26 24 22 20 18 16 14 12 10 16 -20 -15 -10 -5 0 5 10 15 20 25 30 Gain IRL ORL 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Frequency (GHz) Power vs. Frequency Power, Gain, Id vs. Input Power @ 14 GHz 36 35 34 33 32 31 30 29 28 27 26 Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Power (dBm) Gain (dB) Output Power (dBm) Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Psat P1dB 12 12.5 13 13.5 14 14.5 15 15.5 36 34 32 30 28 26 24 22 20 18 16 16 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 Power Gain Id -10 -8 -6 -4 -2 Frequency (GHz) 0 2 4 6 8 Id (A) 30 29 28 27 26 25 24 23 22 21 20 Return Loss (dB) S-Parameters vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Gain (dB) S-Parameters vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Return Loss (dB) Gain (dB) Typical Performance 10 12 Input Power (dBm) TOI vs. Frequency vs. Pout/Tone Power Detector vs. Pout vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C 45 10 Output TOI (dBm) 44 Vdiff (V) 1 12.7GHz 13.3GHz 14.4GHz 15.4GHz 0.1 43 42 41 Pout/Tone = 21dBm 40 Pout/Tone = 20dBm Pout/Tone = 19dBm 39 38 0.01 -5 0 5 10 15 20 25 30 12 35 Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Output Power (dBm) - 4 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier IM3 vs. Pout/Tone vs. Frequency IM5 vs. Pout/Tone vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 12.7GHz 13.3GHz 14.4GHz 15.4GHz 14 16 18 20 IM5 (dBc) IM3 (dBc) Typical Performance (cont.) 22 24 26 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 28 12.7GHz 13.3GHz 14.4GHz 15.4GHz 14 16 18 Pout/Tone (dBm) 20 22 24 26 28 Pout/Tone (dBm) Gain vs. Frequency vs. Id Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C 30 Gain dB 29 28 6V 1.3A 6V 1.2A 27 6V 1.1A 26 25 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Saturated Power vs. Frequency vs. Id 36 35 34 33 32 31 30 29 28 27 26 6V 1.3A 6V 1.2A 6V 1.1A 12 12.5 13 13.5 14 14.5 15 TOI vs. Frequency vs. Id OTOI @ 20dBm Pout/Tone (dBm) Psat (dBm) Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C 15.5 16 05/19/11 © 2010 TriQuint Semiconductor, Inc. 44 43 42 6V 1.3A 41 6V 1.2A 40 6V 1.1A 39 38 12 Frequency (GHz) Data Sheet: Rev A Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C 45 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) - 5 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Application Circuit R1 10ohms C10 1 µF C6 0.01 µF Vd = 6 V Id = 1.3 A C5 100 pF C1 100 pF Vdet R4 100Kohms 16 15 14 13 12 11 10 9 +_ Vdiff 6V R5 Vref RF In 8 1 100Kohms RF Out TGA2533 2 C2 100 pF 3 5 4 R3 10 ohms Vg = -0.55 V Typical 6 C3 100 pF 7 C4 100 pF C8 1 µF R2 10 ohms C9 1 µF C7 0.01 µF Vg can be biased from either side (pins 2,3,4 or pins 14,15,16), and the non-biased side can be left open. Vd must be biased from both sides (pins 5, 6, 7 and pins 11,12,13). Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 1.3A. This will be ~ Vg = -0.55 V Apply RF signal to RF Input Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 mA Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. Turn Vd to 0 V Turn Vg to 0 V - 6 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Bond Pad Description 16 15 14 13 12 11 10 9 8 1 2 3 4 5 6 7 Bond Pad Symbol Description 1 2,16 3,15 4,14 5,13 6,12 7,11 8 9 10 RF IN Vg1 Vg2 Vg3 Vd1 Vd2 Vd3 RF OUT Vdet Vref GND Input, matched to 50 ohms. Gate voltage for 1st stage. See Note 1. Gate voltage for 2nd stage. See Note 1. Gate voltage for 3rd stage. See Note 1. Drain voltage for 1st stage. See Note 2. Drain voltage for 2nd stage. See Note 2. Drain voltage for 3rd stage. See Note 2. Output, matched to 50 ohms Detector diode output voltage. Varies with RF output power. Reference diode output voltage. Backside of die. Notes: 1. 2. ESD protection included; Bias network is required; can be biased from either side (pins 2,3,4 or pins 14,15,16), and non-biased side can be left opened; see Application Circuit on page 6 as an example. Bias network is required; must be biased from both sides; see Application Circuit on page 6 as an example. Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. - 7 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Assembly Drawing Bill of Material Ref Des C1, C2, C3, C4, C5 C6, C7 C8, C9, C10 R1, R2, R3 Value Description 100 pF Cap, 50V, 25%, Single Layer Cap various 0.01 uF 1 uF 10 Ohms Cap, 50V, 10%, SMD Cap, 50V, 5% Res, 1/4W, 5% Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. Manufacturer Part Number various various various - 8 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier 3.000 2.892 161514 13 12 2.747 2.952 3.092 3.200 1.208 1.368 0.108 0.245 0.395 Mechanical Information 11 10 9 8 56 7 2.747 3.089 234 0 0.108 0.245 0.395 0.108 0 1 1.208 1.368 1.175 1.825 Unit: millimeters Thickness: 0.10 Die x, y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad 1 2,16 3,15 4,14 5,13 6,12 7,11 8 9 10 Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. Symbol Pad Size RF IN Vg1 Vg2 Vg3 Vd1 Vd2 Vd3 RF OUT Vdet Vref 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.200 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 - 9 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Product Compliance Information ESD Information Solderability This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). ESD Rating: Value: Test: Standard: Class 0 < 250V Human Body Model (HBM) JEDEC Standard JESD22-A114 ECCN This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free US Department of Commerce 3A001.b.2.c Assembly Notes Component placement and adhesive attachment assembly notes: • Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • The force impact is critical during auto placement. • Organic attachment (i.e. epoxy) can be used in low-power applications. • Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: • Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum. • An alloy station or conveyor furnace with reducing atmosphere should be used. • Do not use any kind of flux. • Coefficient of thermal expansion matching is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: • Thermosonic ball bonding is the preferred interconnect technique. • Force, time, and ultrasonics are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. - 10 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2533 Ku-Band Power Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright © 2010 TriQuint Semiconductor, Inc. All rights reserved. Data Sheet: Rev A 05/19/11 © 2010 TriQuint Semiconductor, Inc. - 11 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®