SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125 A peak current Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Symbol VDRM IT(RMS) ITSM IGM TC Tstg TL Value Ratings Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds B C D 200 300 400 E Unit M S N 500 600 700 800 V 16 A 125 A ±1 -40 to +110 -40 to +125 A °C °C 230 °C THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance 30/10/2012 COMSET SEMICONDUCTORS Value Unit ≤ 1.9 ≤ 62.5 °C/W 1|3 SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Repetitive peak VD = Rated VDRM, , IG = 0 off-state current TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Gate trigger current Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Gate trigger voltage Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, IG = 0 initiating ITM = 100 mA Holding current Vsupply = -12 V†, IG = 0 initiating ITM = -100 mA Vsupply = +12 V† (seeNote5) Latching current Vsupply = -12 V† (seeNote5) Peak on-state ITM = ± 22.5 A, IG = 50 mA (see Note4) voltage Critical rate of VDRM = Rated VDRM, IG = 0 rise of off-state TC = 110°C voltage Critical rate of VDRM = Rated VDRM, IGT = 50 mA rise of off-state diG/dt = 50mA/µs, TC = 110°C current Critical rise of VDRM = Rated VDRM, IT = 1.4 IT(RMS) communication di/dt = 0.5 IT(RMS) /ms, TC = 80°C voltage IDRM IGT VGT IH IL VTM dv/dt di/dt dv/dt© Min Typ Max Unit - - ±2 mA - 12 -19 -16 34 0.8 -0.8 -0.8 0.9 50 -50 -50 2 -2 -2 2 - 22 40 mA V mA - -22 -40 - - 80 -80 mA - ±1.4 ±1.7 V - ±400 - V/µs - ±100 - A/µs ±1.2 ±9 - V/µs † All voltages are whit respect to Main Terminal 1. Notes: 1. 2. 3. 4. 5. 30/10/2012 These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltagesensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz. COMSET SEMICONDUCTORS 2|3 SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Main Terminal 1 Main Terminal 2 Gate Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 30/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3