SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125 A peak current Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds VDRM IT(RMS) ITSM IGM TC Tstg TL Unit B C D E M S N 200 300 400 500 600 700 800 16 A 125 A ±1 -40 to +110 -40 to +125 A °C °C 230 °C Notes: 1. 2. 3. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. Page 1 of 3 V SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value Unit ≤ 1.9 ≤ 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak offstate current IGT Gate trigger current VGT Gate trigger voltage IH Holding current Test Condition(s) VD = Rated VDRM, , IG = 0, TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - ±2 - 12 -19 -16 34 0.8 -0.8 -0.8 0.9 50 -50 -50 2 -2 -2 2 Vsupply = +12 V†, IG = 0, initiating ITM = 100 mA - 22 40 Vsupply = -12 V†, IG = 0, initiating ITM = -100 mA - -22 -40 - ±1.4 80 -80 ±1.7 - ±400 - V/µs - ±100 - A/µs ±9 - V/µs Latching current VTM Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of off-state current Vsupply = +12 V† (seeNote5) Vsupply = -12 V† (seeNote5) ITM = ± 22.5 A, IG = 50 mA (see Note4) VDRM = Rated VDRM, IG = 0 TC = 110°C VDRM = Rated VDRM, IGT = 50 mA, diG/dt = 50mA/µs, TC = 110°C Critical rise of communication voltage VDRM = Rated VDRM, IT = 1.4 IT(RMS) di/dt = 0.5 IT(RMS) /ms, TC = 80°C di/dt dv/dt© Mx Unit - IL dv/dt Min Typ mA V mA ±1.2 † All voltages are whit respect to Main Terminal 1. Note 4: This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 5: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz. Page 2 of 3 mA mA V SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Page 3 of 3 Main Terminal 1 Main Terminal 2 Gate