COMSET TIC246B

SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
•
•
High current triacs
16 A RMS
70 A Peak
Glass Passivated Wafer
200 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1-3)
125 A peak current
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Ratings
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
Unit
B
C
D
E
M
S
N
200
300
400
500
600
700
800
16
A
125
A
±1
-40 to +110
-40 to +125
A
°C
°C
230
°C
Notes:
1.
2.
3.
These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 400 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
Page 1 of 3
V
SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
THERMAL CHARACTERISTICS
Symbol
R∂JC
R∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
Value
Unit
≤ 1.9
≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak offstate current
IGT
Gate trigger current
VGT
Gate trigger voltage
IH
Holding current
Test Condition(s)
VD = Rated VDRM, , IG = 0,
TC = 110°C
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
±2
-
12
-19
-16
34
0.8
-0.8
-0.8
0.9
50
-50
-50
2
-2
-2
2
Vsupply = +12 V†, IG = 0,
initiating ITM = 100 mA
-
22
40
Vsupply = -12 V†, IG = 0,
initiating ITM = -100 mA
-
-22
-40
-
±1.4
80
-80
±1.7
-
±400
-
V/µs
-
±100
-
A/µs
±9
-
V/µs
Latching current
VTM
Peak on-state voltage
Critical rate of rise of
off-state voltage
Critical rate of rise of
off-state current
Vsupply = +12 V† (seeNote5)
Vsupply = -12 V† (seeNote5)
ITM = ± 22.5 A, IG = 50 mA (see Note4)
VDRM = Rated VDRM, IG = 0
TC = 110°C
VDRM = Rated VDRM, IGT = 50 mA,
diG/dt = 50mA/µs, TC = 110°C
Critical rise of
communication voltage
VDRM = Rated VDRM, IT = 1.4 IT(RMS)
di/dt = 0.5 IT(RMS) /ms, TC = 80°C
di/dt
dv/dt©
Mx Unit
-
IL
dv/dt
Min Typ
mA
V
mA
±1.2
† All voltages are whit respect to Main Terminal 1.
Note 4: This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body.
Note 5: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.
Page 2 of 3
mA
mA
V
SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Page 3 of 3
Main Terminal 1
Main Terminal 2
Gate