Transistors IC IC IC IC SMD SMD Type Type Product specification KRF7379 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 30 -30 V Continuous Drain Current, VGS @ 10V @ Ta = 25 ID 5.8 -4.3 Continuous Drain Current, VGS @ 10V @ Ta = 70 ID 4.6 -3.4 Pulsed Drain Current *1 IDM 46 -34 Drain-Source Voltage Power Dissipation PD @Ta= 25 Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 R 2.5 W 0.02 W/ 20 V 5.0 TJ, TSTG -5.0 V/ns -55 to + 150 50 JA A /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD 2.4A, di/dt 73A/ P-Channel ISD -1.8A, di/dt 90A/ *3 Surface mounted on FR-4 board, t http://www.twtysemi.com s, VDD V(BR)DSS, TJ 150 s, VDD V(BR)DSS, TJ 150 10sec. [email protected] 4008-318-123 1 of 3 Transistors IC IC IC IC SMD SMD Type Type Product specification KRF7379 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient N-Ch 30 P-Ch -30 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.032 TJ ID = 1mA,Reference to 25 P-Ch -0.037 Static Drain-to-Source On-Resistance RDS(on) Drain-to-Source Leakage Current VGS(th) gfs IDSS VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.9A*1 VGS = -10V, ID = -4.3A*1 VGS = -4.5V, ID = -3.7A*1 Total Gate Charge IGSS Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductace LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss http://www.twtysemi.com Max V V/ 0.055 0.075 0.070 0.090 P-Ch 0.130 0.180 N-Ch 1.0 VDS = VGS, ID = -250 A P-Ch -1.0 VDS = 15V, ID = 2.4A*1 N-Ch 5.2 VDS = -24V, ID = -1.8A*1 P-Ch 2.5 V S VDS = 24V, VGS = 0V N-Ch 1.0 VDS = -24V, VGS = 0V P-Ch -1.0 VDS = 24V, VGS = 0V, TJ = 125 N-Ch 25 P-Ch -25 VGS = 20V N-Channel ID = 2.4A,VDS = 24V,VGS =10V N-Ch P-Ch 100 N-Ch 25 P-Ch 25 2.9 P-Channel P-Ch 2.9 ID = -1.8A,VDS = -24V,VGS = -10V N-Ch 7.9 P-Ch 9.0 N-Ch 6.8 VDD = 15V,ID = 2.4A,RG = 6.0 P-Ch 11 RD=6.2 N-Ch 21 P-Channel P-Ch 17 VDD = -15V,ID = -1.8A,RG = 6.0 N-Ch 22 RD=8.2 P-Ch 25 N-Ch 7.7 P-Ch 18 N-Ch 4.0 Between lead, 6mm (0.25in.) from P-Ch 4.0 package and center of die contact N-Ch 6.0 P-Ch 6.0 N-Channel N-Ch 520 VGS = 0V,VDS = 25V,f = 1.0MHz P-Ch 440 N-Ch 180 P-Channel P-Ch 200 VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch 72 P-Ch 93 [email protected] 4008-318-123 A 100 N-Ch N-Channel Unit 0.038 0.045 N-Ch VDS = VGS, ID = 250 A VDS = -24V, VGS = 0V, TJ = 125 Gate-to-Source Forward Leakage Typ VGS = 0V, ID = 250 A RDS(on) Forward Transconductance Min VGS = 0V, ID = 250 A V(BR)DSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Testconditons Symbol nC ns nH pF 2 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF7379 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr 300 s; duty cycle Min IS Body Diode) Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 3.1 P-Ch -3.1 N-Ch 46 P-Ch -34 TJ = 25 , IS = 1.8A, VGS = 0V*1 N-Ch 1.0 TJ = 25 , IS = -1.8A, VGS = 0V*1 P-Ch -1.0 N-Channel TJ = 25 , IF =2.4A,di/dt = 100A/ s*1 P-Channel TJ=25 , IF=-1.8A,di/dt=-100A/ s*1 N-Ch 47 71 P-Ch 53 80 N-Ch 56 84 P-Ch 66 99 Unit A V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3