Transistors IC IC IC IC SMD SMD Type Type Product specification KRF7389 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 30 -30 V ID 7.3 -5.3 Continuous Drain Current Ta = 70 ID 5.9 -4.2 Pulsed Drain Current *1 IDM 30 -30 IS 2.5 -2.5 Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 2.5 PD W 1.6 @Ta= 70 A 20 Gate-to-Source Voltage VGS Single Pulse Avalanche Energy EAS 82 140 mJ IAR 4.0 -2.8 A Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt 0.20 Maximum Junction-to-Ambient *3 R mJ 3.8 -2.2 V/ns -55 to + 150 TJ, TSTG Junction and Storage Temperature Range V 50 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD 4.0A, di/dt P-Channel ISD -2.8A, di/dt 74A/ 1500A/ *3 Surface mounted on FR-4 board, t http://www.twtysemi.com s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF7389 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate-to-Source Forward Leakage 30 VGS = 0V, ID = 250 A P-Ch -30 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.022 TJ ID = 1mA,Reference to 25 P-Ch 0.022 V(BR)DSS RDS(on) RDS(on) IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.7A*1 VGS = -10V, ID = -4.9A*1 VGS = -4.5V, ID = -3.6A*1 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Continuous Source Current Body Diode) Body Diode) *2 http://www.twtysemi.com Max V V/ 0.032 0.046 0.042 0.058 P-Ch .076 0.098 N-Ch 1 VDS = VGS, ID = -250 A P-Ch -1.0 V VDS = 15V, ID = 5.8A*1 N-Ch 14 VDS = -15V, ID = -4.9A*1 P-Ch 7.7 VDS = 24V, VGS = 0V N-Ch 1.0 VDS = -24V, VGS = 0V P-Ch -1.0 VDS = 24V, VGS = 0V, TJ = 55 N-Ch 25 VDS = -24V, VGS = 0V, TJ = 55 P-Ch -25 VGS = 20V S N-Ch 100 P-Ch 100 N-Channel N-Ch 22 33 ID = 5.8A,VDS = 15V,VGS =10V P-Ch 23 34 N-Ch 2.6 3.9 P-Channel P-Ch 3.8 5.7 ID = -4.9A,VDS = -15V,VGS = -10V N-Ch 6.4 9.6 P-Ch 5.9 8.9 N-Channel N-Ch 8.1 12 VDD = 15V,ID = 1.A,RG = 6.0 P-Ch 13 19 RD=15 N-Ch 8.9 13 P-Channel P-Ch 13 20 VDD = -15V,ID = -1.8A,RG = 6.0 N-Ch 26 39 P-Ch 34 51 N-Ch 17 26 48 RD=15 N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Ch 32 N-Ch 650 P-Ch 710 N-Ch 320 P-Channel P-Ch 380 VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch 130 P-Ch 180 IS ISM [email protected] Unit 0.023 0.029 N-Ch VDS = VGS, ID = 250 A tf Input Capacitance Typ N-Ch gfs Drain-to-Source Leakage Current Min VGS = 0V, ID = 250 A VGS(th) Forward Transconductance Pulsed Source Current Testconditons Symbol nA nC ns pF N-Ch 2.5 P-Ch -2.5 N-Ch 30 P-Ch -30 4008-318-123 A A 2 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF7389 Electrical Characteristics Ta = 25 Parameter Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr *1 Pulse width 300 s; duty cycle Testconditons Symbol Typ Max TJ = 25 , IS = 1.7A, VGS = 0V*1 N-Ch Min 0.78 1.0 TJ = 25 , IS = -1.7A, VGS = 0V*1 P-Ch -0.78 -1.0 N-Ch 45 68 P-Ch 44 66 N-Ch 58 87 s*1 P-Ch 42 63 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ = 25 , IF =-1.7A,di/dt = -100A/ s*1 Unit V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3